SSN1N45BTA Fairchild Semiconductor, SSN1N45BTA Datasheet - Page 6
![MOSFET N-CH 450V 500MA TO-92](/photos/5/41/54198/to-92_pkg_sml.jpg)
SSN1N45BTA
Manufacturer Part Number
SSN1N45BTA
Description
MOSFET N-CH 450V 500MA TO-92
Manufacturer
Fairchild Semiconductor
Datasheet
1.SSN1N45BTA.pdf
(8 pages)
Specifications of SSN1N45BTA
Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Standard
Rds On (max) @ Id, Vgs
4.25 Ohm @ 250mA, 10V
Drain To Source Voltage (vdss)
450V
Current - Continuous Drain (id) @ 25° C
500mA
Vgs(th) (max) @ Id
3.7V @ 250µA
Gate Charge (qg) @ Vgs
8.5nC @ 10V
Input Capacitance (ciss) @ Vds
240pF @ 25V
Power - Max
900mW
Mounting Type
Through Hole
Package / Case
TO-92-3 (Standard Body), TO-226
Configuration
Single
Transistor Polarity
N-Channel
Resistance Drain-source Rds (on)
4.25 Ohm @ 10 V
Forward Transconductance Gfs (max / Min)
0.7 S
Drain-source Breakdown Voltage
450 V
Gate-source Breakdown Voltage
+/- 50 V
Continuous Drain Current
0.5 A
Power Dissipation
900 mW
Maximum Operating Temperature
+ 150 C
Mounting Style
Through Hole
Minimum Operating Temperature
- 55 C
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
SSN1N45BTA
Manufacturer:
FSC
Quantity:
4 000
Part Number:
SSN1N45BTA
Manufacturer:
FAIRCHILD/仙童
Quantity:
20 000
©2002 Fairchild Semiconductor Corporation
( Driver )
( Driver )
( DUT )
( DUT )
( DUT )
( DUT )
V
V
I
I
V
V
SD
SD
GS
GS
DS
DS
V
V
GS
GS
Peak Diode Recovery dv/dt Test Circuit & Waveforms
R
R
G
G
Driver
Driver
DUT
DUT
I
I
FM
FM
I
I
D =
D =
D =
SD
SD
, Body Diode Forward Current
, Body Diode Forward Current
Forward Voltage Drop
Forward Voltage Drop
--------------------------
--------------------------
--------------------------
Gate Pulse Period
Gate Pulse Period
Gate Pulse Period
Gate Pulse Width
Gate Pulse Width
Gate Pulse Width
Body Diode
Body Diode
Same Type
Same Type
V
V
Body Diode Recovery dv/dt
Body Diode Recovery dv/dt
as DUT
as DUT
+
+
_
_
DS
DS
• dv/dt controlled by R
• dv/dt controlled by R
• I
• I
V
V
SD
SD
SD
SD
Body Diode Reverse Current
Body Diode Reverse Current
controlled by pulse period
controlled by pulse period
I
I
RM
RM
L
L L
G
G
di/dt
di/dt
V
V
V
V
10V
10V
DD
DD
DD
DD
Rev. A, November 2002