FDD306P Fairchild Semiconductor, FDD306P Datasheet - Page 2

• Manufacturer Part Number: FDD306P
• Description: MOSFET P-CH 12V 6.7A D-PAK
• Manufacturer: Fairchild Semiconductor
• Series: PowerTrench®r

Specifications of FDD306P

• Fet Type: MOSFET P-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 28 mOhm @ 6.7A, 4.5V
• Drain To Source Voltage (vdss): 12V
• Current - Continuous Drain (id) @ 25° C: 6.7A
• Vgs(th) (max) @ Id: 1.5V @ 250µA
• Gate Charge (qg) @ Vgs: 21nC @ 4.5V
• Input Capacitance (ciss) @ Vds: 1290pF @ 6V
• Power - Max: 1.6W
• Mounting Type: Surface Mount
• Package / Case: DPak, TO-252 (2 leads+tab), SC-63
• Transistor Polarity: P Channel
• Continuous Drain Current Id: 6.7A
• Drain Source Voltage Vds: 12V
• On Resistance Rds(on): 90mohm
• Rds(on) Test Voltage Vgs: -4.5V
• Threshold Voltage Vgs Typ: -500mV
• Rohs Compliant: Yes
• Configuration: Single
• Resistance Drain-source Rds (on): 0.028 Ohms
• Drain-source Breakdown Voltage: - 12 V
• Gate-source Breakdown Voltage: +/- 8 V
• Continuous Drain Current: 6.7 A
• Power Dissipation: 52 W
• Maximum Operating Temperature: + 175 C
• Mounting Style: SMD/SMT
• Minimum Operating Temperature: - 55 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

FDD306P Rev. C
Electrical Characteristics
Notes:
1. R
Scale 1 : 1 on letter size paper
2. Pulse Test: Pulse Width < 300 µ s, Duty Cycle < 2.0%
3. Maximum current is calculated as:
4. Starting T
Off Characteristics
BV
∆ BV
I
I
On Characteristics (Note 2)
V
∆ V
R
I
g
Dynamic Characteristics
C
C
C
R
Switching Characteristics (Note 2)
t
t
t
t
Q
Q
Q
Drain–Source Diode Characteristics and Maximum Ratings
I
V
Trr
Irm
Qrr
Symbol
DSS
GSSF
D(on)
d(on)
r
d(off)
f
S
FS
GS(th)
SD
∆ T
∆ T
DS(on)
iss
oss
rss
G
R
g
gs
gd
GS(th)
θ JA
θ JC
DSS
DSS
J
J
is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of the drain pins.
is guaranteed by design while R
J
= 25°C, L = TBD, I
Drain–Source Breakdown Voltage
Breakdown Voltage Temperature Coefficient
Zero Gate Voltage Drain Current
Gate–Body Leakage
Gate Threshold Voltage
Gate Threshold Voltage
Temperature Coefficient
Static Drain–Source
On–Resistance
On–State Drain Current
Forward Transconductance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Gate Resistance
Turn–On Delay Time
Turn–On Rise Time
Turn–Off Delay Time
Turn–Off Fall Time
Total Gate Charge
Gate–Source Charge
Gate–Drain Charge
Maximum Continuous Drain–Source Diode Forward Current
Drain–Source Diode Forward Voltage
Diode Reverse Recovery Time
Diode Reverse Recovery Current
Diode Reverse Recovery Charge
AS
= -6.7A
Parameter
θ CA
----------------------- -
R
DS ON
is determined by the user's board design.
P
D
(
a) R
)
where P
on a 1in
T
θJA
A
= 40°C/W when mounted
= 25°C unless otherwise noted
D
2
is maximum power dissipation at T
pad of 2 oz copper
V
I
V
V
V
I
V
V
V
V
V
V
V
f = 1.0 MHz
V
V
V
V
V
V
IF = –6.7 A,
diF/dt = 100 A/µs
D
D
GS
DS
GS
DS
GS
GS
GS
GS
GS
DS
DS
GS
DD
GS
DS
GS
GS
= –250 µ A, Referenced to 25 ° C
= –250 µ A, Referenced to 25 ° C
= 0 V, I
= –10 V, V
= ± 8V, V
= V
= –4.5 V, I
= –2.5 V, I
= –1.8 V, I
= –4.5 V, I
= –4.5 V, V
= –5 V, I
= –6 V, V
= 15 mV, f = 1.0 MHz
= –6 V, I
= –4.5 V, R
= –6V, I
= –4.5 V
= 0 V, I
2
GS
Test Conditions
, I
D
S
D
D
D
D
DS
= –250 µ A
GS
= –3.2 A
C
= –6.7 A,
= –250 µ A
GS
D
D
D
D
= –6.7 A
= –1 A,
DS
= 25°C and R
GEN
= 0 V
= –6.7 A
= –6.1 A
= –4.8 A
= –6.7A, T
= 0 V,
= 0 V
= –5 V
= 6 Ω
DS(on)
(Note 3)
(Note 2)
J
= 125 ° C
b) R
is at T
minimum pad.
θJA
J(max)
= 96°C/W when mounted on a
and V
Min
–0.4
–12
–45
GS
= 10V.
1290
Typ
–0.6
–0.5
–0.8
590
430
2.2
4.2
2.0
4.4
0.9
21
29
42
25
22
16
34
41
15
37
17
8
Max Units
± 100
–1.5
–3.2
–1.2
www.fairchildsemi.com
–1
28
41
90
29
16
54
65
21
mV/ ° C
mV/ ° C
m Ω
nC
nC
nC
nC
µ A
nA
pF
pF
pF
ns
ns
ns
ns
ns
Ω
A
V
A
V
V
A
S