FDFM2P110 Fairchild Semiconductor, FDFM2P110 Datasheet - Page 4

MOSFET P-CH 20V 3.5A 3X3 MLP

FDFM2P110

Manufacturer Part Number
FDFM2P110
Description
MOSFET P-CH 20V 3.5A 3X3 MLP
Manufacturer
Fairchild Semiconductor
Series
PowerTrench®r
Datasheet

Specifications of FDFM2P110

Fet Type
MOSFET P-Channel, Metal Oxide
Fet Feature
Diode (Isolated)
Rds On (max) @ Id, Vgs
140 mOhm @ 3.5A, 4.5V
Drain To Source Voltage (vdss)
20V
Current - Continuous Drain (id) @ 25° C
3.5A
Vgs(th) (max) @ Id
1.5V @ 250µA
Gate Charge (qg) @ Vgs
4nC @ 4.5V
Input Capacitance (ciss) @ Vds
280pF @ 10V
Power - Max
800mW
Mounting Type
Surface Mount
Package / Case
6-MLP, Power33
Configuration
Single Dual Source
Transistor Polarity
P-Channel
Resistance Drain-source Rds (on)
0.14 Ohms
Drain-source Breakdown Voltage
- 20 V
Gate-source Breakdown Voltage
+/- 12 V
Continuous Drain Current
3.5 A
Power Dissipation
2 W
Maximum Operating Temperature
+ 150 C
Mounting Style
SMD/SMT
Minimum Operating Temperature
- 55 C
Lead Free Status / RoHS Status
Lead free / RoHS Compliant

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
FDFM2P110
Manufacturer:
FAIRCHILD/仙童
Quantity:
20 000
Typical Characteristics
8
6
4
2
0
10
8
6
4
2
0
0.5
1.6
1.4
1.2
0.8
0.6
0
1
Figure 3.
-50
V
Figure 1.
GS
Figure 5. Transfer Characteristics
V
= -4.5V
V
I
D
GS
DS
= -3.5A
= -4.5V
-25
1
= -5V
1
-V
On-Resistance Variation with
-V
GS
On-Region Characteristics
T
, GATE TO SOURCE VOLTAGE (V)
DS
0
-3.5V
J
, DRAIN-SOURCE VOLTAGE (V)
, JUNCTION TEMPERATURE (
1.5
Temperature
25
2
2
-3.0V
50
T
A
= -55
3
75
2.5
o
C
-2.5V
125
o
100
C)
o
C
4
3
-2.0V
125
25
o
C
150
3.5
5
4
Figure 6.
0.0001
0.44
0.36
0.32
0.28
0.24
0.16
0.12
0.08
0.001
0.4
0.2
0.01
2.4
2.2
1.8
1.6
1.4
1.2
0.8
100
0.1
10
Figure 2.
Figure 4.
2
1
1
with Source Current and Temperature
1
0.2
0
Drain Current and Gate Voltage
V
V
GS
GS
Body Diode Forward Voltage Variation
= 0V
= -2.5V
Gate-to-Source Voltage
-V
T
On-Resistance Variation with
On-Resistance Variation with
0.4
-V
2
A
SD
= 25
GS
T
, BODY DIODE FORWARD VOLTAGE (V)
-3.0V
2
A
, GATE TO SOURCE VOLTAGE (V)
= 125
o
C
-I
D
, DRAIN CURRENT (A)
o
C
-3.5V
0.6
4
25
o
3
C
T
A
-55
= 125
-4.0V
0.8
6
o
C
FDFM2P110 Rev. C4 (W)
o
C
4
8
1
-4.5V
I
D
= -1.8A
1.2
10
5

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