FQD7P06TM Fairchild Semiconductor, FQD7P06TM Datasheet - Page 4

• Manufacturer Part Number: FQD7P06TM
• Description: MOSFET P-CH 60V 5.4A DPAK
• Manufacturer: Fairchild Semiconductor
• Series: QFET™r

Specifications of FQD7P06TM

• Fet Type: MOSFET P-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 451 mOhm @ 2.7A, 10V
• Drain To Source Voltage (vdss): 60V
• Current - Continuous Drain (id) @ 25° C: 5.4A
• Vgs(th) (max) @ Id: 4V @ 250µA
• Gate Charge (qg) @ Vgs: 8.2nC @ 10V
• Input Capacitance (ciss) @ Vds: 295pF @ 25V
• Power - Max: 2.5W
• Mounting Type: Surface Mount
• Package / Case: DPak, TO-252 (2 leads+tab), SC-63
• Configuration: Single
• Transistor Polarity: P-Channel
• Resistance Drain-source Rds (on): 0.451 Ohm @ 10 V
• Forward Transconductance Gfs (max / Min): 3.8 S
• Drain-source Breakdown Voltage: 60 V
• Gate-source Breakdown Voltage: +/- 25 V
• Continuous Drain Current: 5.4 A
• Power Dissipation: 2500 mW
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Minimum Operating Temperature: - 55 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

©2001 Fairchild Semiconductor Corporation
Typical Characteristics
10
10
10
1.2
1.1
1.0
0.9
0.8
-1
Figure 9. Maximum Safe Operating Area
-100
1
0
10
Figure 7. Breakdown Voltage Variation
0
-50
-V
T
vs. Temperature
J
DS
, Junction Temperature [
0
, Drain-Source Voltage [V]
Operation in This Area
is Limited by R
※ Notes :
1 0
1 0
1. T
2. T
3. Single Pulse
- 1
1 0
C
J
0
= 150
= 25
- 5
0 .0 5
0 .0 2
0 .0 1
o
D = 0 .5
0 .1
C
o
10
0 .2
C
50
DS(on)
1
DC
Figure 11. Transient Thermal Response Curve
10 ms
100
1 0
(Continued)
s i n g l e p u ls e
o
- 4
C]
1 ms
※ Notes :
1. V
2. I
t
1
D
100 s
, S q u a r e W a v e P u ls e D u r a t io n [ s e c ]
GS
= -250 μ A
150
= 0 V
1 0
- 3
200
10
2
1 0
- 2
2.5
2.0
1.5
1.0
0.5
0.0
6
5
4
3
2
1
0
-100
25
※ N o te s :
Figure 8. On-Resistance Variation
1 . Z
2 . D u ty F a c to r , D = t
3 . T
1 0
Figure 10. Maximum Drain Current
- 1
θ J C
J M
P
-50
DM
- T
( t) = 4 .5 ℃ /W M a x .
50
C
vs. Case Temperature
= P
T
vs. Temperature
D M
J
T
t
, Junction Temperature [
1
C
t
1 0
0
, Case Temperature [ ℃ ]
* Z
2
1
0
/t
θ J C
75
2
( t)
50
100
1 0
1
100
o
C]
※ Notes :
125
1. V
2. I
150
D
GS
= -2.7 A
= -10 V
Rev. A2. May 2001
200
150