ZVP3310ASTOA Diodes Zetex, ZVP3310ASTOA Datasheet - Page 2

• Manufacturer Part Number: ZVP3310ASTOA
• Description: MOSFET P-CHAN 100V TO92-3
• Manufacturer: Diodes Zetex

Specifications of ZVP3310ASTOA

• Fet Type: MOSFET P-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 20 Ohm @ 150mA, 10V
• Drain To Source Voltage (vdss): 100V
• Current - Continuous Drain (id) @ 25° C: 140mA
• Vgs(th) (max) @ Id: 3.5V @ 1mA
• Input Capacitance (ciss) @ Vds: 50pF @ 25V
• Power - Max: 625mW
• Mounting Type: Through Hole
• Package / Case: TO-92-3 (Standard Body), TO-226
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Gate Charge (qg) @ Vgs: -

-0.6
-0.4
-0.2
-10
100
-8
-4
-6
-2
50
0
10
0
-10
0
Voltage Saturation Characteristics
0
On-resistance v drain current
V
V
V
GS-
DS
GS=
Output Characteristics
-2
-10
V
-12V
-16V
- Drain Source Voltage (Volts)
Gate Source Voltage (Volts)
-20V
GS
I
D-
=-4V
Drain Current (mA)
-4
-20
-100
-5V
TYPICAL CHARACTERISTICS
-6
-30
-6V -7V
-8
-8V -10V
-40
-20V
-1000
-10
-50
-5V
-4.5V
-4V
-3.5V
-0.15A
-10V
-6V
I
-0.3A
-9V
-8V
-7V
-0.075A
D=
Normalised R
-0.6
-0.4
-0.2
-0.6
-0.4
-0.2
0
2.6
2.4
2.2
2.0
1.8
1.6
1.4
1.2
1.0
0.8
0.6
0
0
-40 -20
Saturation Characteristics
V
DS
V
Transfer Characteristics
GS-
- Drain Source Voltage (Volts)
-2
-2
DS(on)
Gate Source Voltage (Volts)
T
0 20 40 60 80
j
-Junction Temperature (°C)
-4
and V
-4
V
-10V
GS(th)
DS=
-6
-6
100
v Temperature
120
-8
I
V
D=
I
-8
V
D=
140 160
GS=
GS=
-150mA
-1mA
V
-10V
DS
-10
180
-10
-10V
-12V
-16V
-14V
V
-20V
-9V
-8V
-7V
-6V
-5V
-4V
GS=