FQD5P10TM Fairchild Semiconductor, FQD5P10TM Datasheet - Page 4

• Manufacturer Part Number: FQD5P10TM
• Description: MOSFET P-CH 100V 3.6A DPAK
• Manufacturer: Fairchild Semiconductor
• Series: QFET™r

Specifications of FQD5P10TM

• Fet Type: MOSFET P-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 1.05 Ohm @ 1.8A, 10V
• Drain To Source Voltage (vdss): 100V
• Current - Continuous Drain (id) @ 25° C: 3.6A
• Vgs(th) (max) @ Id: 4V @ 250µA
• Gate Charge (qg) @ Vgs: 8.2nC @ 10V
• Input Capacitance (ciss) @ Vds: 250pF @ 25V
• Power - Max: 2.5W
• Mounting Type: Surface Mount
• Package / Case: DPak, TO-252 (2 leads+tab), SC-63
• Configuration: Single
• Transistor Polarity: P-Channel
• Resistance Drain-source Rds (on): 1.05 Ohms
• Forward Transconductance Gfs (max / Min): 2.3 S
• Drain-source Breakdown Voltage: - 100 V
• Gate-source Breakdown Voltage: +/- 30 V
• Continuous Drain Current: - 3.6 A
• Power Dissipation: 2.5 W
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Minimum Operating Temperature: - 55 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

©2008 Fairchild Semiconductor Corporation
Typical Characteristics
10
1.2
1.1
1.0
0.9
0.8
10
10
Figure 9. Maximum Safe Operating Area
-100
-1
1
0
10
Figure 7. Breakdown Voltage Variation
0
-50
T
-V
vs. Temperature
J
, Junction Temperature [
DS
Operation in This Area
is Limited by R
0
, Drain-Source Voltage [V]
1 0
※ Notes :
1 0
1. T
2. T
3. Single Pulse
- 1
1 0
0
C
J
= 150
= 25
10
- 5
1
D = 0 . 5
0 .0 2
o
0 .0 5
0 .0 1
C
o
0 .1
DS(on)
0 .2
50
C
DC
10 ms
Figure 11. Transient Thermal Response Curve
100
1 0
(Continued)
1 ms
s in g le p u ls e
o
- 4
C]
※ Notes :
1. V
2. I
t
1
100 s
, S q u a r e W a v e P u ls e D u r a t io n [ s e c ]
D
GS
= -250 μ A
150
= 0 V
10
2
1 0
- 3
200
1 0
- 2
3.0
2.5
2.0
1.5
1.0
0.5
0.0
4
3
2
1
0
-100
25
※ N o te s :
Figure 8. On-Resistance Variation
Figure 10. Maximum Drain Current
1 0
1 . Z
2 . D u ty F a c t o r , D = t
3 . T
- 1
P
θ
J M
DM
-50
J C
- T
( t ) = 5 . 0 ℃ /W M a x .
50
C
vs. Case Temperature
= P
T
vs. Temperature
T
t
D M
J
1
, Junction Temperature [
C
t
0
, Case Temperature [ ℃ ]
1 0
2
* Z
0
1
75
θ
/t
2
J C
( t )
50
100
1 0
1
100
o
C]
※ Notes :
125
1. V
2. I
150
D
GS
= -1.8 A
= -10 V
Rev. B1, October 2008
200
150