FDT458P Fairchild Semiconductor, FDT458P Datasheet - Page 3
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FDT458P
Manufacturer Part Number
FDT458P
Description
MOSFET P-CH 30V 3.4A SOT-223
Manufacturer
Fairchild Semiconductor
Series
PowerTrench®r
Datasheet
1.FDT458P.pdf
(5 pages)
Specifications of FDT458P
Fet Type
MOSFET P-Channel, Metal Oxide
Fet Feature
Logic Level Gate
Rds On (max) @ Id, Vgs
130 mOhm @ 3.4A, 10V
Drain To Source Voltage (vdss)
30V
Current - Continuous Drain (id) @ 25° C
3.4A
Vgs(th) (max) @ Id
3V @ 250µA
Gate Charge (qg) @ Vgs
3.5nC @ 10V
Input Capacitance (ciss) @ Vds
205pF @ 15V
Power - Max
1.1W
Mounting Type
Surface Mount
Package / Case
SOT-223 (3 leads + Tab), SC-73, TO-261
Configuration
Single Dual Drain
Transistor Polarity
P-Channel
Resistance Drain-source Rds (on)
0.13 Ohm @ 10 V
Forward Transconductance Gfs (max / Min)
3 S
Drain-source Breakdown Voltage
30 V
Gate-source Breakdown Voltage
+/- 20 V
Continuous Drain Current
3.4 A
Power Dissipation
3000 mW
Maximum Operating Temperature
+ 150 C
Mounting Style
SMD/SMT
Minimum Operating Temperature
- 55 C
Continuous Drain Current Id
3.4A
Drain Source Voltage Vds
-30V
On Resistance Rds(on)
105mohm
Rds(on) Test Voltage Vgs
-10V
Threshold Voltage Vgs Typ
1.8V
Transistor Case Style
SOT-223
Rohs Compliant
Yes
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Part Number:
FDT458P
Manufacturer:
FAIRCHILD/仙童
Quantity:
20 000
Typical Characteristics
5
4
3
2
1
0
10
1.5
8
6
4
2
0
1.7
1.5
1.3
1.1
0.9
0.7
Figure 3. On-Resistance Variation with
0
Figure 1. On-Region Characteristics.
V
V
-50
DS
Figure 5. Transfer Characteristics.
GS
= -5V
V
= -10V
I
D
GS
= -3.4A
= -10V
-25
2
1
-V
-V
GS
DS
0
-6.0V
, GATE TO SOURCE VOLTAGE (V)
T
, DRAIN TO SOURCE VOLTAGE (V)
J
, JUNCTION TEMPERATURE (
Temperature.
V
-5.0V
25
2.5
2
50
-4.5V
75
3
3
T
100
A
= -55
-4.0V
o
C)
125
3.5
o
C
4
-3.5V
125
150
-3.0V
o
C
25
o
C
5
175
4
Figure 6. Body Diode Forward Voltage Variation
0.55
0.45
0.35
0.25
0.15
0.05
0.0001
0.001
0.01
with Source Current and Temperature.
1.8
1.6
1.4
1.2
0.8
Figure 2. On-Resistance Variation with
Figure 4. On-Resistance Variation with
0.1
2
10
2
1
1
T
0
0
A
Drain Current and Gate Voltage.
= 25
V
o
GS
V
C
Gate-to-Source Voltage.
GS
0.2
=0V
-V
=-4.5V
-V
SD
2
GS
4
T
, BODY DIODE FORWARD VOLTAGE (V)
A
, GATE TO SOURCE VOLTAGE (V)
= 125
0.4
T
-5.0V
-I
A
D
= 125
, DRAIN CURRENT (A)
o
C
4
0.6
o
C
-6.0V
25
6
o
C
0.8
-7.0V
6
-55
o
C
1
-8.0V
8
8
FDT458P Rev. B(W)
I
D
1.2
-10V
= -1.7A
1.4
10
10