FDT458P Fairchild Semiconductor, FDT458P Datasheet - Page 3

• Manufacturer Part Number: FDT458P
• Description: MOSFET P-CH 30V 3.4A SOT-223
• Manufacturer: Fairchild Semiconductor
• Series: PowerTrench®r

Specifications of FDT458P

• Fet Type: MOSFET P-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 130 mOhm @ 3.4A, 10V
• Drain To Source Voltage (vdss): 30V
• Current - Continuous Drain (id) @ 25° C: 3.4A
• Vgs(th) (max) @ Id: 3V @ 250µA
• Gate Charge (qg) @ Vgs: 3.5nC @ 10V
• Input Capacitance (ciss) @ Vds: 205pF @ 15V
• Power - Max: 1.1W
• Mounting Type: Surface Mount
• Package / Case: SOT-223 (3 leads + Tab), SC-73, TO-261
• Configuration: Single Dual Drain
• Transistor Polarity: P-Channel
• Resistance Drain-source Rds (on): 0.13 Ohm @ 10 V
• Forward Transconductance Gfs (max / Min): 3 S
• Drain-source Breakdown Voltage: 30 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 3.4 A
• Power Dissipation: 3000 mW
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Minimum Operating Temperature: - 55 C
• Continuous Drain Current Id: 3.4A
• Drain Source Voltage Vds: -30V
• On Resistance Rds(on): 105mohm
• Rds(on) Test Voltage Vgs: -10V
• Threshold Voltage Vgs Typ: 1.8V
• Transistor Case Style: SOT-223
• Rohs Compliant: Yes
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

Typical Characteristics
5
4
3
2
1
0
10
1.5
8
6
4
2
0
1.7
1.5
1.3
1.1
0.9
0.7
Figure 3. On-Resistance Variation with
0
Figure 1. On-Region Characteristics.
V
V
-50
DS
Figure 5. Transfer Characteristics.
GS
= -5V
V
= -10V
I
D
GS
= -3.4A
= -10V
-25
2
1
-V
-V
GS
DS
0
-6.0V
, GATE TO SOURCE VOLTAGE (V)
T
, DRAIN TO SOURCE VOLTAGE (V)
J
, JUNCTION TEMPERATURE (
Temperature.
V
-5.0V
25
2.5
2
50
-4.5V
75
3
3
T
100
A
= -55
-4.0V
o
C)
125
3.5
o
C
4
-3.5V
125
150
-3.0V
o
C
25
o
C
5
175
4
Figure 6. Body Diode Forward Voltage Variation
0.55
0.45
0.35
0.25
0.15
0.05
0.0001
0.001
0.01
with Source Current and Temperature.
1.8
1.6
1.4
1.2
0.8
Figure 2. On-Resistance Variation with
Figure 4. On-Resistance Variation with
0.1
2
10
2
1
1
T
0
0
A
Drain Current and Gate Voltage.
= 25
V
o
GS
V
C
Gate-to-Source Voltage.
GS
0.2
=0V
-V
=-4.5V
-V
SD
2
GS
4
T
, BODY DIODE FORWARD VOLTAGE (V)
A
, GATE TO SOURCE VOLTAGE (V)
= 125
0.4
T
-5.0V
-I
A
D
= 125
, DRAIN CURRENT (A)
o
C
4
0.6
o
C
-6.0V
25
6
o
C
0.8
-7.0V
6
-55
o
C
1
-8.0V
8
8
FDT458P Rev. B(W)
I
D
1.2
-10V
= -1.7A
1.4
10
10