FQP8P10 Fairchild Semiconductor, FQP8P10 Datasheet - Page 7

• Manufacturer Part Number: FQP8P10
• Description: MOSFET P-CH 100V 8A TO-220
• Manufacturer: Fairchild Semiconductor
• Series: QFET™r

Specifications of FQP8P10

• Fet Type: MOSFET P-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 530 mOhm @ 4A, 10V
• Drain To Source Voltage (vdss): 100V
• Current - Continuous Drain (id) @ 25° C: 8A
• Vgs(th) (max) @ Id: 4V @ 250µA
• Gate Charge (qg) @ Vgs: 15nC @ 10V
• Input Capacitance (ciss) @ Vds: 470pF @ 25V
• Power - Max: 65W
• Mounting Type: Through Hole
• Package / Case: TO-220-3 (Straight Leads)
• Configuration: Single
• Transistor Polarity: P-Channel
• Resistance Drain-source Rds (on): 0.53 Ohm @ 10 V
• Forward Transconductance Gfs (max / Min): 4.3 S
• Drain-source Breakdown Voltage: 100 V
• Gate-source Breakdown Voltage: +/- 30 V
• Continuous Drain Current: 8 A
• Power Dissipation: 65000 mW
• Maximum Operating Temperature: + 175 C
• Mounting Style: Through Hole
• Minimum Operating Temperature: - 55 C
• Continuous Drain Current Id: 8A
• Drain Source Voltage Vds: 100V
• On Resistance Rds(on): 410mohm
• Rds(on) Test Voltage Vgs: -10V
• Threshold Voltage Vgs Typ: -4V
• Rohs Compliant: No
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

©2002 Fairchild Semiconductor Corporation
Package Dimensions
[2.54
2.54TYP
1.27
0.20
0.10
]
ø3.60
10.00
9.90
(8.70)
0.20
0.10
0.20
[2.54
1.52
0.80
2.54TYP
0.10
0.20
0.10
TO-220
]
0.50
+0.10
–0.05
Dimensions in Millimeters
2.40
4.50
1.30
Rev. B, August 2002
+0.10
–0.05
0.20
0.20