FQP8P10 Fairchild Semiconductor, FQP8P10 Datasheet - Page 7
![MOSFET P-CH 100V 8A TO-220](/photos/5/30/53099/261-to-220-3_sml.jpg)
FQP8P10
Manufacturer Part Number
FQP8P10
Description
MOSFET P-CH 100V 8A TO-220
Manufacturer
Fairchild Semiconductor
Series
QFET™r
Datasheet
1.FQP8P10.pdf
(8 pages)
Specifications of FQP8P10
Fet Type
MOSFET P-Channel, Metal Oxide
Fet Feature
Standard
Rds On (max) @ Id, Vgs
530 mOhm @ 4A, 10V
Drain To Source Voltage (vdss)
100V
Current - Continuous Drain (id) @ 25° C
8A
Vgs(th) (max) @ Id
4V @ 250µA
Gate Charge (qg) @ Vgs
15nC @ 10V
Input Capacitance (ciss) @ Vds
470pF @ 25V
Power - Max
65W
Mounting Type
Through Hole
Package / Case
TO-220-3 (Straight Leads)
Configuration
Single
Transistor Polarity
P-Channel
Resistance Drain-source Rds (on)
0.53 Ohm @ 10 V
Forward Transconductance Gfs (max / Min)
4.3 S
Drain-source Breakdown Voltage
100 V
Gate-source Breakdown Voltage
+/- 30 V
Continuous Drain Current
8 A
Power Dissipation
65000 mW
Maximum Operating Temperature
+ 175 C
Mounting Style
Through Hole
Minimum Operating Temperature
- 55 C
Continuous Drain Current Id
8A
Drain Source Voltage Vds
100V
On Resistance Rds(on)
410mohm
Rds(on) Test Voltage Vgs
-10V
Threshold Voltage Vgs Typ
-4V
Rohs Compliant
No
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
FQP8P10
Manufacturer:
FAIRCHILD
Quantity:
12 500
Part Number:
FQP8P10
Manufacturer:
ON/安森美
Quantity:
20 000
©2002 Fairchild Semiconductor Corporation
Package Dimensions
[2.54
2.54TYP
1.27
0.20
0.10
]
ø3.60
10.00
9.90
(8.70)
0.20
0.10
0.20
[2.54
1.52
0.80
2.54TYP
0.10
0.20
0.10
TO-220
]
0.50
+0.10
–0.05
Dimensions in Millimeters
2.40
4.50
1.30
Rev. B, August 2002
+0.10
–0.05
0.20
0.20