FDD4243 Fairchild Semiconductor, FDD4243 Datasheet - Page 2

• Manufacturer Part Number: FDD4243
• Description: MOSFET P-CH 40V 6.7A DPAK
• Manufacturer: Fairchild Semiconductor
• Series: PowerTrench®r

Specifications of FDD4243

• Fet Type: MOSFET P-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 44 mOhm @ 6.7A, 10V
• Drain To Source Voltage (vdss): 40V
• Current - Continuous Drain (id) @ 25° C: 6.7A
• Vgs(th) (max) @ Id: 3V @ 250µA
• Gate Charge (qg) @ Vgs: 29nC @ 10V
• Input Capacitance (ciss) @ Vds: 1550pF @ 20V
• Power - Max: 3W
• Mounting Type: Surface Mount
• Package / Case: DPak, TO-252 (2 leads+tab), SC-63
• Configuration: Single
• Transistor Polarity: P-Channel
• Resistance Drain-source Rds (on): 0.044 Ohm @ 10 V
• Forward Transconductance Gfs (max / Min): 16 S
• Drain-source Breakdown Voltage: 40 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 6.7 A
• Power Dissipation: 42000 mW
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Minimum Operating Temperature: - 55 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: FDD4243TR

FDD4243 Rev.C1
Electrical Characteristics
Off Characteristics
On Characteristics
Dynamic Characteristics
Switching Characteristics
Drain-Source Diode Characteristics
Notes:
1: R
2: Pulse Test: Pulse Width < 300µs, Duty cycle < 2.0%.
3: Starting T
BV
∆BV
I
I
V
r
g
C
C
C
R
t
t
t
t
Q
Q
Q
V
t
Q
∆V
DSS
GSS
d(on)
r
d(off)
f
rr
DS(on)
FS
GS(th)
SD
iss
oss
rss
g
∆T
∆T
g(TOT)
gs
gd
rr
b. 96°C/W when mounted on a minimum pad.
guaranteed by design while R
a. 40°C/W when mounted on a 1 in
Symbol
DSS
θJA
GS(th)
DSS
J
J
is sum of junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of the drain pins. R
J
= 25°C, L = 3mH, I
Drain to Source Breakdown Voltage
Breakdown Voltage Temperature
Coefficient
Zero Gate Voltage Drain Current
Gate to Source Leakage Current
Gate to Source Threshold Voltage
Gate to Source Threshold Voltage
Temperature Coefficient
Drain to Source On Resistance
Forward Transconductance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Gate Resistance
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Total Gate Charge at 10V
Gate to Source Gate Charge
Gate to Drain “Miller” Charge
Source to Drain Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
θJC
AS
= 7.5A, V
2
is determined by the user’s board design.
pad of 2 oz copper
Parameter
DD
= 40V, V
T
J
GS
= 25°C unless otherwise noted
= 10V.
V
I
V
V
V
V
V
V
V
f = 1MHz
f = 1MHz
V
I
I
I
V
V
V
D
V
V
F
D
D
GS
GS
GS
GS
DS
DD
GS
DS
GS
DS
GS
GS
DD
GS
= -250µA, referenced to 25°C
= -6.7A, di/dt = 100A/µs
= -250µA, V
= -250µA, referenced to 25°C
= -5V, I
= V
= -10V, I
= -4.5V, I
= -10V, I
= -20V, V
= -20V, I
= -10V, R
= 0V, I
= -32V,
= 0V
= ±20V, V
= -10V
= -20V, I
2
DS
Test Conditions
, I
S
D
D
D
D
= -6.7A
D
D
D
GS
= -6.7A
GEN
GS
= -6.7A, T
= -6.7A
GS
= -250µA
= -6.7A
= -5.5A
= -6.7A
= 0V,
= 0V
= 0V
= 6Ω
T
J
= 125°C
(Note 2)
J
= 125°C
-1.4
Min
-40
1165
0.86
165
-1.6
3.4
Typ
90
29
30
4.7
15
22
21
-32
36
48
53
16
4
6
7
4
1550
±100
Max
220
135
-100
-3.0
1.2
12
26
35
14
29
43
44
44
64
69
www.fairchildsemi.com
-1
mV/°C
mV/°C
Units
mΩ
nC
pF
pF
pF
nC
nC
nC
µA
nA
ns
ns
ns
ns
ns
Ω
V
V
S
V
θJC
is