FQPF3N30 Fairchild Semiconductor, FQPF3N30 Datasheet - Page 39

• Manufacturer Part Number: FQPF3N30
• Description: MOSFET N-CH 300V 1.95A TO-220F
• Manufacturer: Fairchild Semiconductor
• Series: QFET™r

Specifications of FQPF3N30

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 2.2 Ohm @ 980mA, 10V
• Drain To Source Voltage (vdss): 300V
• Current - Continuous Drain (id) @ 25° C: 1.95A
• Vgs(th) (max) @ Id: 5V @ 250µA
• Gate Charge (qg) @ Vgs: 7nC @ 10V
• Input Capacitance (ciss) @ Vds: 230pF @ 25V
• Power - Max: 20W
• Mounting Type: Through Hole
• Package / Case: TO-220-3 Full Pack (Straight Leads)
• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 2.2 Ohms
• Drain-source Breakdown Voltage: 300 V
• Gate-source Breakdown Voltage: +/- 30 V
• Continuous Drain Current: 1.95 A
• Power Dissipation: 20 W
• Maximum Operating Temperature: + 150 C
• Mounting Style: Through Hole
• Minimum Operating Temperature: - 55 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

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TO-252 (DPAK) (Continued)
SFR9310
FQD6P25
FQD4P25
SFR9224
SFR9214
SFR9230B
FQD7P20
FQD5P20
SFR9220
FQD3P20
SFR9210
FQD12P10
SFR9130
FQD8P10
SFR9120
FQD5P10
SFR9110
FDD5614P
FQD17P06
SFR9034
FQD11P06
SFR9024
SFR2955
FQD7P06
SFR9014
FDD6685
Products
Min. (V)
BV
-400
-250
-250
-250
-250
-200
-200
-200
-200
-200
-200
-100
-100
-100
-100
-100
-100
-60
-60
-60
-60
-60
-60
-60
-60
-30
DSS
Config.
Single
Single
Single
Single
Single
Single
Single
Single
Single
Single
Single
Single
Single
Single
Single
Single
Single
Single
Single
Single
Single
Single
Single
Single
Single
Single
0.135
0.185
10V
0.69
0.29
0.53
1.05
0.14
0.28
0.45
0.02
1.1
2.1
2.4
0.6
1.4
1.5
2.7
0.3
0.6
1.2
0.1
0.3
0.5
8
4
3
R
DS(ON)
4.5V
0.13
0.03
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
Max (Ω) @ V
2-34
2.5V
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
GS
=
1.8V
Bold = New Products (introduced January 2003 or later)
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
Discrete Power Products –
Q
@V
g
Typ. (nC)
GS
6.3
6.3
17
21
10
16
29
19
10
15
21
30
12
16
15
21
30
13
15
15
17
9
6
9
9
9
= 5V
I
D
1.5
4.7
3.1
2.5
1.5
5.4
5.7
3.7
3.1
2.4
1.6
9.4
9.8
6.6
4.9
3.6
2.8
9.4
7.8
7.6
5.4
5.3
15
12
14
40
(A)
MOSFETs
P
D
36
55
45
30
19
49
55
45
30
37
19
50
57
44
32
25
20
42
44
49
38
32
32
28
24
52
(W)