FQD3N50CTM Fairchild Semiconductor, FQD3N50CTM Datasheet - Page 4

• Manufacturer Part Number: FQD3N50CTM
• Description: MOSFET N-CH 500V 2.5A DPAK
• Manufacturer: Fairchild Semiconductor
• Series: QFET™r

Specifications of FQD3N50CTM

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 2.5 Ohm @ 1.25A, 10V
• Drain To Source Voltage (vdss): 500V
• Current - Continuous Drain (id) @ 25° C: 2.5A
• Vgs(th) (max) @ Id: 4V @ 250µA
• Gate Charge (qg) @ Vgs: 13nC @ 10V
• Input Capacitance (ciss) @ Vds: 365pF @ 25V
• Power - Max: 35W
• Mounting Type: Surface Mount
• Package / Case: DPak, TO-252 (2 leads+tab), SC-63
• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 2.1 Ohms
• Forward Transconductance Gfs (max / Min): 1.5 S
• Drain-source Breakdown Voltage: 500 V
• Gate-source Breakdown Voltage: +/- 30 V
• Continuous Drain Current: 2.5 A
• Power Dissipation: 34 W
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Minimum Operating Temperature: - 55 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

FQD3N50C / FQU3N50C Rev. B
Typical Performance Characteristics
Figure 7. Breakdown Voltage Variation
Figure 9. Maximum Safe Operating Area
Figure 11. Transient Thermal Response Curve
10
10
10
10
10
-1
-2
2
1
0
10
1.2
1.1
1.0
0.9
0.8
-100
0
vs. Temperature
Operation in This Area
is Limited by R
-50
V
T
DS
10
J
, Junction Temperature [
, Drain-Source Voltage [V]
1
DS(on)
Notes :
0
1. T
2. T
3. Single Pulse
C
J
= 150
= 25
1 0
1 0
1 0
°
C
°
C
-1
-2
10
0
50
-5
0 .0 1
0 .0 2
D = 0 .5
100 ms
0 .0 5
0 .1
0 .2
10 ms
DC
10
sin gle p u ls e
1 ms
2
100
100
°
C]
10
Notes :
µ
1. V
2. I
-4
s
D
GS
t
= 250
1
150
= 0 V
, S q u a re W a ve P u ls e D u ra tio n [s e c ]
µ
A
10
10
3
200
-3
(Continued)
4
1 0
Figure 8. On-Resistance Variation
Figure 10. Maximum Drain Current
-2
3
2
1
0
25
N o te s :
1 . Z
2 . D uty F ac to r, D = t
3 . T
P
3.0
2.5
2.0
1.5
1.0
0.5
0.0
1 0
DM
-100
vs. Temperature
-1
θ
JM
JC
vs. Case Temperature
(t) = 3 .5
- T
C
t
= P
50
1
t
2
-50
D M
°
C /W M ax.
1 0
* Z
T
1
θ
0
C
/t
JC
T
, Case Temperature [
2
(t)
J
, Junction Temperature [
0
75
1 0
50
1
100
°
100
C]
°
C]
125
Notes :
1. V
2. I
www.fairchildsemi.com
150
D
GS
= 1.5 A
= 10 V
150
200