FDD8880 Fairchild Semiconductor, FDD8880 Datasheet - Page 5

• Manufacturer Part Number: FDD8880
• Description: MOSFET N-CH 30V 58A D-PAK
• Manufacturer: Fairchild Semiconductor
• Series: PowerTrench®r

Specifications of FDD8880

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 9 mOhm @ 35A, 10V
• Drain To Source Voltage (vdss): 30V
• Current - Continuous Drain (id) @ 25° C: 58A
• Vgs(th) (max) @ Id: 2.5V @ 250µA
• Gate Charge (qg) @ Vgs: 31nC @ 10V
• Input Capacitance (ciss) @ Vds: 1260pF @ 15V
• Power - Max: 55W
• Mounting Type: Surface Mount
• Package / Case: DPak, TO-252 (2 leads+tab), SC-63
• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 0.009 Ohm @ 10 V
• Drain-source Breakdown Voltage: 30 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 13 A
• Power Dissipation: 55000 mW
• Maximum Operating Temperature: + 175 C
• Mounting Style: SMD/SMT
• Minimum Operating Temperature: - 55 C
• Fall Time: 32 ns
• Rise Time: 91 ns
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

©2008 Fairchild Semiconductor Corporation
Typical Characteristics
Figure 11. Normalized Gate Threshold Voltage vs
Figure 13. Capacitance vs Drain to Source
1000
2000
100
1.2
1.0
0.8
0.6
0.4
0.1
-80
V
C
GS
RSS
= 0V, f = 1MHz
-40
Junction Temperature
V
C
DS
GD
T
J
, DRAIN TO SOURCE VOLTAGE (V)
, JUNCTION TEMPERATURE (
0
C
ISS
Voltage
1
C
40
GS
+ C
C
GD
OSS
80
V
T
GS
C
C
= V
= 25°C unless otherwise noted
DS
120
DS
+ C
o
, I
C)
D
GD
10
= 250 A
160
200
30
Figure 14. Gate Charge Waveforms for Constant
Breakdown Voltage vs Junction Temperature
10
8
6
4
2
0
1.10
1.05
1.00
0.95
0.90
Figure 12. Normalized Drain to Source
0
-80
V
DD
I
D
= 15V
= 250 A
-40
5
T
J
, JUNCTION TEMPERATURE (
Gate Current
0
Q
g
, GATE CHARGE (nC)
10
40
WAVEFORMS IN
DESCENDING ORDER:
80
15
I
I
D
D
= 35A
= 1A
120
o
C)
20
160
FDD8880 Rev. B3
200
25