SI4447DY-T1-E3 Vishay, SI4447DY-T1-E3 Datasheet

MOSFET P-CH 40V 3.3A 8-SOIC

SI4447DY-T1-E3

Manufacturer Part Number
SI4447DY-T1-E3
Description
MOSFET P-CH 40V 3.3A 8-SOIC
Manufacturer
Vishay
Series
TrenchFET®r
Datasheet

Specifications of SI4447DY-T1-E3

Transistor Polarity
P-Channel
Fet Type
MOSFET P-Channel, Metal Oxide
Fet Feature
Logic Level Gate
Rds On (max) @ Id, Vgs
54 mOhm @ 4.5A, 10V
Drain To Source Voltage (vdss)
40V
Current - Continuous Drain (id) @ 25° C
3.3A
Vgs(th) (max) @ Id
2.2V @ 250µA
Gate Charge (qg) @ Vgs
14nC @ 4.5V
Input Capacitance (ciss) @ Vds
805pF @ 20V
Power - Max
1.1W
Mounting Type
Surface Mount
Package / Case
8-SOIC (3.9mm Width)
Minimum Operating Temperature
- 55 C
Configuration
Single Quad Drain Triple Source
Resistance Drain-source Rds (on)
0.054 Ohm @ 10 V
Drain-source Breakdown Voltage
40 V
Gate-source Breakdown Voltage
+/- 16 V
Continuous Drain Current
3.3 A
Power Dissipation
1100 mW
Maximum Operating Temperature
+ 150 C
Mounting Style
SMD/SMT
Continuous Drain Current Id
-4.5A
Drain Source Voltage Vds
-40V
On Resistance Rds(on)
72mohm
Rds(on) Test Voltage Vgs
16V
Threshold Voltage Vgs Typ
-2.2V
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Lead Free Status / RoHS Status
Lead free / RoHS Compliant, Lead free / RoHS Compliant
Other names
SI4447DY-T1-E3TR

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
SI4447DY-T1-E3
Manufacturer:
VISHAY
Quantity:
8 495
Part Number:
SI4447DY-T1-E3
Manufacturer:
VISHAY
Quantity:
20 000
Part Number:
SI4447DY-T1-E3
Manufacturer:
VISHAY
Quantity:
180
Part Number:
SI4447DY-T1-E3
Manufacturer:
VISHAY/威世
Quantity:
20 000
Company:
Part Number:
SI4447DY-T1-E3
Quantity:
70 000
Notes:
a. Surface mounted on 1" x 1" FR4 board.
Document Number: 73662
S09-0322-Rev. B, 02-Mar-09
PRODUCT SUMMARY
ABSOLUTE MAXIMUM RATINGS T
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current (T
Pulsed Drain Current
Continuous Source Current (Diode Conduction)
Avalanche Current
Single Pulse Avalanche Energy
Maximum Power Dissipation
Operating Junction and Storage Temperature Range
THERMAL RESISTANCE RATINGS
Parameter
Maximum Junction-to-Ambient
Maximum Junction-to-Foot (Drain)
V
DS
- 40
Ordering Information: Si4447DY-T1-E3 (Lead (Pb)-free)
(V)
G
S
S
S
0.072 at V
0.054 at V
1
2
3
4
R
DS(on)
GS
GS
Si4447DY-T1-GE3 (Lead (Pb)-free and Halogen-free)
Top View
SO-8
= - 4.5 V
(Ω)
= - 10 V
J
a
= 150 °C)
a
P-Channel 40-V (D-S) MOSFET
8
7
6
5
a
I
D
- 4.5
- 3.9
D
D
D
D
(A)
a
A
Q
= 25 °C, unless otherwise noted
g
(Typ.)
L = 0.1 mH
T
T
T
T
9
Steady State
Steady State
A
A
A
A
= 25 °C
= 70 °C
= 25 °C
= 70 °C
t ≤ 10 s
FEATURES
APPLICATIONS
• Halogen-free According to IEC 61249-2-21
• TrenchFET
• 100 % R
• CCFL Inverter
Symbol
T
J
Definition
100 % UIS Tested
V
V
E
I
I
P
, T
Symbol
DM
I
I
AS
GS
DS
AS
D
S
D
R
R
stg
thJA
thJF
g
Tested
®
Power MOSFET
G
Typical
10 s
- 4.5
- 3.6
- 1.7
1.3
2
50
85
30
P-Channel MOSFET
- 55 to 150
± 16
- 40
- 30
16
13
S
D
Steady State
Maximum
- 3.3
- 2.7
- 0.9
1.1
0.7
62.5
110
Vishay Siliconix
40
Si4447DY
www.vishay.com
Unit
°C/W
mJ
°C
W
Unit
V
A
1

Related parts for SI4447DY-T1-E3

SI4447DY-T1-E3 Summary of contents

Page 1

... GS SO Top View Ordering Information: Si4447DY-T1-E3 (Lead (Pb)-free) Si4447DY-T1-GE3 (Lead (Pb)-free and Halogen-free) ABSOLUTE MAXIMUM RATINGS T Parameter Drain-Source Voltage Gate-Source Voltage a Continuous Drain Current (T = 150 °C) J Pulsed Drain Current Continuous Source Current (Diode Conduction) Avalanche Current Single Pulse Avalanche Energy a Maximum Power Dissipation ...

Page 2

... Si4447DY Vishay Siliconix SPECIFICATIONS °C, unless otherwise noted J Parameter Static Gate-Source Threshold Voltage V Temperature Coefficient DS V Temperature Coefficient GS(th) Gate-Source Leakage Zero Gate Voltage Drain Current a On-State Drain Current a Drain-Source On-State Resistance a Forward Transconductance a Diode Forward Voltage b Dynamic Input Capacitance Output Capacitance ...

Page 3

... J 1 0.0 0.2 0.4 0 Source-to-Drain Voltage (V) SD Source-Drain Diode Forward Voltage Document Number: 73662 S09-0322-Rev. B, 02-Mar- °C J 0.8 1.0 1.2 1.4 Si4447DY Vishay Siliconix 1240 1116 992 C 868 iss 744 620 496 372 248 C oss 124 C rss Drain-to-Source Voltage (V) DS Capacitance 1 ...

Page 4

... Si4447DY Vishay Siliconix TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted 0.6 0 250 µA D 0.2 0.0 - 0 Temperature (°C) J Threshold Voltage 2 1 Duty Cycle = 0.5 0.2 0.1 0.1 0.05 0.02 Single Pulse 0. www.vishay.com 100 125 150 100 Limited DS(on D(on) Limited °C A 0.1 ...

Page 5

... Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and reliability data, see www.vishay.com/ppg?73662. Document Number: 73662 S09-0322-Rev. B, 02-Mar- Square Wave Pulse Duration (s) Normalized Thermal Transient Impedance, Junction-to-Foot Si4447DY Vishay Siliconix - www.vishay.com ...

Page 6

... Vishay disclaims any and all liability arising out of the use or application of any product described herein or of any information provided herein to the maximum extent permitted by law. The product specifications do not expand or otherwise modify Vishay’ ...

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