FDC3612_F095 Fairchild Semiconductor, FDC3612_F095 Datasheet
FDC3612_F095
Manufacturer Part Number
FDC3612_F095
Description
MOSFET N-CH 100V 2.6A 6-SSOT
Manufacturer
Fairchild Semiconductor
Series
PowerTrench®r
Datasheet
1.FDC3612_F095.pdf
(5 pages)
Specifications of FDC3612_F095
Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Logic Level Gate
Rds On (max) @ Id, Vgs
125 mOhm @ 2.6A, 10V
Drain To Source Voltage (vdss)
100V
Current - Continuous Drain (id) @ 25° C
2.6A
Vgs(th) (max) @ Id
4V @ 250µA
Gate Charge (qg) @ Vgs
20nC @ 10V
Input Capacitance (ciss) @ Vds
660pF @ 50V
Power - Max
800mW
Mounting Type
Surface Mount
Package / Case
6-SSOT, SuperSOT-6
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
FDC3612
100V N-Channel PowerTrench
General Description
This
specifically to improve the overall efficiency of DC/DC
converters using either synchronous or conventional
switching PWM controllers. It has been optimized for
low gate charge, low R
Applications
• DC/DC converter
2002 Fairchild Semiconductor Corporation
Absolute Maximum Ratings
Symbol
V
V
I
P
T
Thermal Characteristics
R
R
Package Marking and Ordering Information
D
J
DSS
GSS
D
θJA
θJC
, T
Device Marking
STG
N-Channel
.362
SuperSOT -6
Drain-Source Voltage
Gate-Source Voltage
Drain Current
Maximum Power Dissipation
Operating and Storage Junction Temperature Range
Thermal Resistance, Junction-to-Ambient
Thermal Resistance, Junction-to-Case
MOSFET
DS(ON)
D
D
and fast switching speed.
TM
S
– Continuous
– Pulsed
has
FDC3612
Device
Parameter
D
been
D
G
designed
T
A
=25
MOSFET
o
C unless otherwise noted
Reel Size
7’’
(Note 1a)
(Note 1a)
(Note 1b)
(Note 1a)
(Note 1)
Features
• 2.6 A, 100 V
• High performance trench technology for extremely
• Low gate charge (14nC typ)
• High power and current handling capability
• Fast switching speed
low R
DS(ON)
1
2
3
Tape width
–55 to +150
8mm
R
R
Ratings
DS(ON)
DS(ON)
± 20
100
2.6
1.6
0.8
20
78
30
= 125 mΩ @ V
= 135 mΩ @ V
February 2002
6
5
4
FDC3612 Rev B3 (W)
3000 units
Quantity
GS
GS
= 10 V
= 6 V
Units
°C/W
°C/W
°C
W
V
V
A
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Datasheet:
FDC3612_F095 Summary of contents
Page 1
... R θJA Thermal Resistance, Junction-to-Case R θJC Package Marking and Ordering Information Device Marking Device .362 FDC3612 2002 Fairchild Semiconductor Corporation MOSFET Features been designed • 2.6 A, 100 V • High performance trench technology for extremely low R DS(ON) • Low gate charge (14nC typ) • ...
Page 2
Electrical Characteristics Symbol Parameter Drain-Source Avalanche Ratings W Drain-Source Avalanche Energy DSS I Drain-Source Avalanche Current AR Off Characteristics BV Drain–Source Breakdown Voltage DSS ∆BV Breakdown Voltage Temperature DSS ∆T Coefficient J I Zero Gate Voltage Drain Current DSS I ...
Page 3
Typical Characteristics 10V GS 4.5V 5. DRAIN-SOURCE VOLTAGE (V) DS Figure 1. On-Region Characteristics 10V GS 1.8 1.4 ...
Page 4
Typical Characteristics 2. GATE CHARGE (nC) g Figure 7. Gate Charge Characteristics. 100 R LIMIT DS(ON) 10 1ms 10ms 1 100ms 1s 10s 0.1 ...
Page 5
... TRADEMARKS The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended exhaustive list of all such trademarks. ACEx™ FAST Bottomless™ FASTr™ FRFET™ CoolFET™ GlobalOptoisolator™ CROSSVOLT™ GTO™ DenseTrench™ ...