FQP20N06 Fairchild Semiconductor, FQP20N06 Datasheet - Page 3

• Manufacturer Part Number: FQP20N06
• Description: MOSFET N-CH 60V 20A TO-220
• Manufacturer: Fairchild Semiconductor
• Series: QFET™r

Specifications of FQP20N06

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 60 mOhm @ 10A, 10V
• Drain To Source Voltage (vdss): 60V
• Current - Continuous Drain (id) @ 25° C: 20A
• Vgs(th) (max) @ Id: 4V @ 250µA
• Gate Charge (qg) @ Vgs: 15nC @ 10V
• Input Capacitance (ciss) @ Vds: 590pF @ 25V
• Power - Max: 53W
• Mounting Type: Through Hole
• Package / Case: TO-220-3 (Straight Leads)
• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 0.06 Ohm @ 10 V
• Forward Transconductance Gfs (max / Min): 12 S
• Drain-source Breakdown Voltage: 60 V
• Gate-source Breakdown Voltage: +/- 25 V
• Continuous Drain Current: 20 A
• Power Dissipation: 53000 mW
• Maximum Operating Temperature: + 175 C
• Mounting Style: Through Hole
• Minimum Operating Temperature: - 55 C
• Fall Time: 20 ns
• Rise Time: 45 ns
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

©2001 Fairchild Semiconductor Corporation
Typical Characteristics
1200
800
400
10
10
100
0
10
1
0
10
80
60
40
20
0
-1
-1
Top :
Bottom : 5.0 V
0
Figure 5. Capacitance Characteristics
Figure 3. On-Resistance Variation vs.
Figure 1. On-Region Characteristics
15.0 V
10.0 V
Drain Current and Gate Voltage
8.0 V
7.0 V
6.0 V
5.5 V
V
GS
10
V
V
V
GS
DS
C
C
C
DS
oss
iss
rss
= 20V
, Drain-Source Voltage [V]
, Drain-Source Voltage [V]
20
I
D
10
, Drain Current [A]
V
0
GS
10
= 10V
0
※ Notes :
1. 250μ s Pulse Test
2. T
30
C
= 25℃
40
C
C
C
iss
oss
rss
= C
= C
= C
10
※ Note : T
gs
gd
ds
1
+ C
+ C
※ Notes :
gd
gd
50
1. V
2. f = 1 MHz
(C
ds
J
10
GS
= 25℃
= shorted)
= 0 V
1
60
10
10
10
10
10
10
-1
-1
1
0
1
0
12
10
0.2
2
8
6
4
2
0
0
Figure 4. Body Diode Forward Voltage
Figure 6. Gate Charge Characteristics
175 ℃
25 ℃
Figure 2. Transfer Characteristics
175 ℃
0.4
Variation vs. Source Current
2
4
Q
V
V
and Temperature
GS
SD
G
0.6
, Total Gate Charge [nC]
-55 ℃
, Source-Drain voltage [V]
, Gate-Source Voltage [V]
4
25 ℃
V
DS
0.8
V
6
6
= 48V
DS
= 30V
1.0
8
※ Notes :
※ Notes :
1. V
2. 250μ s Pulse Test
1. V
2. 250μ s Pulse Test
※ Note : I
8
DS
GS
= 25V
= 0V
10
1.2
D
= 20A
Rev. A1. May 2001
12
1.4
10