FQPF5P20 Fairchild Semiconductor, FQPF5P20 Datasheet - Page 4

• Manufacturer Part Number: FQPF5P20
• Description: MOSFET P-CH 200V 3.4A TO-220F
• Manufacturer: Fairchild Semiconductor
• Series: QFET™r

Specifications of FQPF5P20

• Fet Type: MOSFET P-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 1.4 Ohm @ 1.7A, 10V
• Drain To Source Voltage (vdss): 200V
• Current - Continuous Drain (id) @ 25° C: 3.4A
• Vgs(th) (max) @ Id: 5V @ 250µA
• Gate Charge (qg) @ Vgs: 13nC @ 10V
• Input Capacitance (ciss) @ Vds: 430pF @ 25V
• Power - Max: 38W
• Mounting Type: Through Hole
• Package / Case: TO-220-3 Full Pack (Straight Leads)
• Configuration: Single
• Transistor Polarity: P-Channel
• Resistance Drain-source Rds (on): 1.4 Ohms
• Forward Transconductance Gfs (max / Min): 2.15 S
• Drain-source Breakdown Voltage: - 200 V
• Gate-source Breakdown Voltage: +/- 30 V
• Continuous Drain Current: 3.4 A
• Power Dissipation: 38 W
• Maximum Operating Temperature: + 150 C
• Mounting Style: Through Hole
• Minimum Operating Temperature: - 55 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

©2000 Fairchild Semiconductor International
Typical Characteristics
10
10
10
1.2
1.1
1.0
0.9
0.8
-1
Figure 9. Maximum Safe Operating Area
-100
1
0
10
Figure 7. Breakdown Voltage Variation
0
-50
-V
T
vs. Temperature
J
DS
, Junction Temperature [
0
, Drain-Source Voltage [V]
Operation in This Area
is Limited by R
※ Notes :
1 0
1 0
1 0
10
1. T
2. T
3. Single Pulse
1
- 1
- 2
0
1 0
C
J
= 150
= 25
- 5
D = 0 .5
0 .0 5
o
0 .0 2
0 .0 1
0 .1
C
o
0 .2
C
50
DS(on)
DC
100 ms
Figure 11. Transient Thermal Response Curve
100
1 0
(Continued)
10 ms
o
- 4
C]
s i n g le p u ls e
10
※ Notes :
t
1. V
2. I
2
1 ms
1
, S q u a r e W a v e P u ls e D u r a t io n [ s e c ]
D
GS
= -250 μ A
150
= 0 V
1 0
- 3
200
1 0
- 2
2.5
2.0
1.5
1.0
0.5
0.0
4
3
2
1
0
-100
25
Figure 8. On-Resistance Variation
※ N o te s :
1 0
Figure 10. Maximum Drain Current
1 . Z
2 . D u ty F a c to r , D = t
3 . T
- 1
P
-50
DM
θ J C
J M
50
- T
( t) = 3 .2 9 ℃ / W M a x .
vs. Case Temperature
C
= P
T
vs. Temperature
J
T
t
, Junction Temperature [
1
C
D M
t
1 0
0
, Case Temperature [ ℃ ]
2
* Z
0
75
1
θ J C
/t
2
( t)
50
100
1 0
1
100
o
C]
※ Notes :
125
1. V
2. I
150
D
GS
= -2.4 A
= -10 V
200
150
Rev. A, May 2000