FQPF11P06 Fairchild Semiconductor, FQPF11P06 Datasheet - Page 3

• Manufacturer Part Number: FQPF11P06
• Description: MOSFET P-CH 60V 8.6A TO-220F
• Manufacturer: Fairchild Semiconductor
• Series: QFET™r

Specifications of FQPF11P06

• Fet Type: MOSFET P-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 175 mOhm @ 4.3A, 10V
• Drain To Source Voltage (vdss): 60V
• Current - Continuous Drain (id) @ 25° C: 8.6A
• Vgs(th) (max) @ Id: 4V @ 250µA
• Gate Charge (qg) @ Vgs: 17nC @ 10V
• Input Capacitance (ciss) @ Vds: 550pF @ 25V
• Power - Max: 30W
• Mounting Type: Through Hole
• Package / Case: TO-220-3 Full Pack (Straight Leads)
• Configuration: Single
• Transistor Polarity: P-Channel
• Resistance Drain-source Rds (on): 0.175 Ohm @ 10 V
• Forward Transconductance Gfs (max / Min): 4.75 S
• Drain-source Breakdown Voltage: 60 V
• Gate-source Breakdown Voltage: +/- 25 V
• Continuous Drain Current: 8.6 A
• Power Dissipation: 30000 mW
• Maximum Operating Temperature: + 175 C
• Mounting Style: Through Hole
• Minimum Operating Temperature: - 55 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

©2004 Fairchild Semiconductor Corporation
Typical Characteristics
1200
1000
10
800
600
400
200
10
10
0.8
0.6
0.4
0.2
0.0
-1
1
0
0
10
10
0
Figure 5. Capacitance Characteristics
-1
Figure 3. On-Resistance Variation vs.
-1
Top :
Bottom : - 4.5 V
Figure 1. On-Region Characteristics
Drain Current and Gate Voltage
- 15.0 V
- 10.0 V
- 8.0 V
- 7.0 V
- 6.0 V
- 5.5 V
- 5.0 V
V
GS
10
-V
-V
DS
DS
, Drain-Source Voltage [V]
, Drain-Source Voltage [V]
-I
D
10
, Drain Current [A]
0
10
20
C
C
C
0
oss
iss
rss
V
V
GS
GS
= - 20V
= - 10V
30
C
C
C
iss
oss
rss
※
= C
= C
= C
10
1. 250µ s Pulse Test
2. T
※
Notes :
gs
gd
ds
1
Note : T
C
+ C
+ C
= 25 ℃
40
10
gd
gd
1
(C
※
J
ds
1. V
2. f = 1 MHz
= 25 ℃
Notes :
= shorted)
GS
= 0 V
50
10
10
10
10
10
10
12
10
8
6
4
2
0
-1
-1
1
0
1
0
0.0
0
2
Figure 6. Gate Charge Characteristics
Figure 4. Body Diode Forward Voltage
25 ℃
Figure 2. Transfer Characteristics
0.2
175 ℃
2
Variation vs. Source Current
175 ℃
0.4
4
-V
-V
4
0.6
Q
SD
and Temperature
GS
-55 ℃
G
, Source-Drain Voltage [V]
, Total Gate Charge [nC]
, Gate-Source Voltage [V]
25 ℃
V
DS
0.8
V
= -48V
DS
6
= -30V
1.0
6
8
1.2
1.4
※
10
※
1. V
2. 250µ s Pulse Test
1. V
2. 250µ s Pulse Test
Notes :
※
Notes :
8
DS
GS
Note : I
1.6
= -30V
= 0V
D
12
= -11.4 A
1.8
Rev. B4, March 2004
2.0
10
14