FQD11P06TM Fairchild Semiconductor, FQD11P06TM Datasheet - Page 7
![MOSFET P-CH 60V 9.4A DPAK](/photos/5/38/53880/261-dpak_sml.jpg)
FQD11P06TM
Manufacturer Part Number
FQD11P06TM
Description
MOSFET P-CH 60V 9.4A DPAK
Manufacturer
Fairchild Semiconductor
Series
QFET™r
Specifications of FQD11P06TM
Fet Type
MOSFET P-Channel, Metal Oxide
Fet Feature
Standard
Rds On (max) @ Id, Vgs
185 mOhm @ 4.7A, 10V
Drain To Source Voltage (vdss)
60V
Current - Continuous Drain (id) @ 25° C
9.4A
Vgs(th) (max) @ Id
4V @ 250µA
Gate Charge (qg) @ Vgs
17nC @ 10V
Input Capacitance (ciss) @ Vds
550pF @ 25V
Power - Max
2.5W
Mounting Type
Surface Mount
Package / Case
DPak, TO-252 (2 leads+tab), SC-63
Configuration
Single
Transistor Polarity
P-Channel
Resistance Drain-source Rds (on)
0.185 Ohms
Forward Transconductance Gfs (max / Min)
4.9 S
Drain-source Breakdown Voltage
- 60 V
Gate-source Breakdown Voltage
+/- 30 V
Continuous Drain Current
- 9.4 A
Power Dissipation
2.5 W
Maximum Operating Temperature
+ 150 C
Mounting Style
SMD/SMT
Minimum Operating Temperature
- 55 C
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
FQD11P06TM
Manufacturer:
ST
Quantity:
1 200
Company:
Part Number:
FQD11P06TM
Manufacturer:
FSC
Quantity:
5 000
Mechanical Dimensions
TO-252 (DPAK) (FS PKG Code 36)
1:1
Scale 1:1 on letter size paper
Dimensions shown below are in:
millimeters
Part Weight per unit (gram): 0.33
©2009 Fairchild Semiconductor Corporation
Rev. C6, January 2009