FDS6690A Fairchild Semiconductor, FDS6690A Datasheet - Page 4

• Manufacturer Part Number: FDS6690A
• Description: MOSFET N-CH 30V 11A 8-SOIC
• Manufacturer: Fairchild Semiconductor
• Series: PowerTrench®r

Specifications of FDS6690A

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 12.5 mOhm @ 11A, 10V
• Drain To Source Voltage (vdss): 30V
• Current - Continuous Drain (id) @ 25° C: 11A
• Vgs(th) (max) @ Id: 3V @ 250µA
• Gate Charge (qg) @ Vgs: 16nC @ 5V
• Input Capacitance (ciss) @ Vds: 1205pF @ 15V
• Power - Max: 1W
• Mounting Type: Surface Mount
• Package / Case: 8-SOIC (3.9mm Width)
• Configuration: Single Quad Drain Triple Source
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 0.0125 Ohm @ 10 V
• Forward Transconductance Gfs (max / Min): 48 S
• Drain-source Breakdown Voltage: 30 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 11 A
• Power Dissipation: 2500 mW
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Minimum Operating Temperature: - 55 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: FDS6690ATR

Typical Characteristics
0.01
100
50
40
30
20
10
0.1
10
0
0.001
10
Figure 9. Maximum Safe Operating Area.
1
8
6
4
2
0
0.01
Figure 7. Gate Charge Characteristics.
0
R
SINGLE PULSE
I
R
D
DS(ON)
θ JA
= 11.0A
V
T
GS
A
= 125
= 25
= 10V
LIMIT
o
o
5
C/W
C
0.1
V
DS
, DRAIN-SOURCE VOLTAGE (V)
Q
g
, GATE CHARGE (nC)
10
0.01
Figure 11. Single Pulse Maximum Power Dissipation.
1
DC
10s
V
DS
15
1s
100ms
= 10V
10ms
20V
10
1ms
100
20
¡
15V
0.1
100
25
t
1
, TIME (sec)
1600
1200
800
400
100
Figure 10. Unclamped Inductive Switching
0
10
1
0.01
0
Figure 8. Capacitance Characteristics.
C
rss
1
5
C
V
DS
oss
Tj=125
0.1
, DRAIN TO SOURCE VOLTAGE (V)
Capability Figure
t
10
AV
¢
, TIME IN AVALANCHE (mS)
15
SINGLE PULSE
R
1
θ JA
T
A
10
= 125° C/W
= 25° C
20
C
iss
Tj=25
10
¢
FDS6690A Rev E1 (W)
25
V
f = 1MHz
GS
= 0 V
30
100
100