ZVP2110ASTZ Diodes Zetex, ZVP2110ASTZ Datasheet - Page 3

• Manufacturer Part Number: ZVP2110ASTZ
• Description: MOSFET P-CHAN 100V TO92-3
• Manufacturer: Diodes Zetex

Specifications of ZVP2110ASTZ

• Fet Type: MOSFET P-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 8 Ohm @ 375mA, 10V
• Drain To Source Voltage (vdss): 100V
• Current - Continuous Drain (id) @ 25° C: 230mA
• Vgs(th) (max) @ Id: 3.5V @ 1mA
• Input Capacitance (ciss) @ Vds: 100pF @ 25V
• Power - Max: 700mW
• Mounting Type: Through Hole
• Package / Case: TO-92-3 (Standard Body), TO-226
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Gate Charge (qg) @ Vgs: -

250
200
150
100
50
0
80
60
40
20
Capacitance v drain-source voltage
0
0
Transconductance v drain current
0
-0.2
V
I
D
DS
-20
- Drain Current (Amps)
-0.4
-Drain Source Voltage (Volts)
-0.6
-40
TYPICAL CHARACTERISTICS
-0.8
-1.0
-60
V
DS=
-1.2
-10V
-80
-1.4
-1.6
-100
C
C
C
oss
rss
iss
3-423
Transconductance v gate-source voltage
-10
-12
-14
-16
-2
-4
-6
-8
0
250
200
150
100
Gate charge v gate-source voltage
50
0
0
0
0.5
V
V
-2
GS
DS
Q-Gate Charge (nC)
-25V
=
-Gate Source Voltage (Volts)
1.0
-50V -100V
-4
1.5
ZVP2110A
V
DS=
-10V
-6
2.0
I
D=-
-8
2.5
0.5A
3.0
-10