IRL630A Fairchild Semiconductor, IRL630A Datasheet - Page 3

• Manufacturer Part Number: IRL630A
• Description: MOSFET N-CH 200V 9A TO-220
• Manufacturer: Fairchild Semiconductor

Specifications of IRL630A

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 400 mOhm @ 4.5A, 5V
• Drain To Source Voltage (vdss): 200V
• Current - Continuous Drain (id) @ 25° C: 9A
• Vgs(th) (max) @ Id: 2V @ 250µA
• Gate Charge (qg) @ Vgs: 27nC @ 5V
• Input Capacitance (ciss) @ Vds: 755pF @ 25V
• Power - Max: 69W
• Mounting Type: Through Hole
• Package / Case: TO-220-3 (Straight Leads)
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

1 . 0 0
0 . 7 5
0 . 5 0
0 . 2 5
0 . 0 0
9 0 0
7 2 0
5 4 0
3 6 0
1 8 0
1 0
0
1 0
1 0
1 0
-1
0
1
0
1 0
0
Fig 5. Capacitance vs. Drain-Source Voltage
-1
Top :
Bottom : 3.0 V
Fig 3. On-Resistance vs. Drain Current
C
C
C
oss
iss
rss
6.0 V
5.5 V
5.0 V
4.5 V
4.0 V
3.5 V
7.0 V
V
5
GS
Fig 1. Output Characteristics
V
V
DS
DS
I
, Drain-Source Voltage [V]
, Drain-Source Voltage [V]
D
1 0
, Drain Current [A]
1 0
V
0
GS
= 5 V
C
C
C
iss
oss
rss
@ N o t e s :
1 5
1 . 2 5 0 s P u l s e T e s t
2 . T
= C
= C
= C
V
GS
C
gs
ds
gd
1 0
= 1 0 V
= 2 5
+ C
+ C
1
gd
gd
2 0
o
C
( C
@ N o t e : T
ds
1 0
= s h o r t e d )
@ N o t e s :
1
1 . V
2 . f = 1 M H z
2 5
J
GS
= 2 5
= 0 V
o
C
3 0
1 0
1 0
1 0
1 0
1 0
1 0
-1
-1
1
0
1
0
6
4
2
0
0 . 4
0
0
Fig 4. Source-Drain Diode Forward Voltage
1 5 0
Fig 6. Gate Charge vs. Gate-Source Voltage
o
2 5
C
0 . 6
o
1 5 0
C
Fig 2. Transfer Characteristics
2 5
o
2
4
C
o
V
V
C
SD
Q
GS
G
0 . 8
, Source-Drain Voltage [V]
V
, Gate-Source Voltage [V]
DS
, Total Gate Charge [nC]
- 5 5
V
= 1 6 0 V
DS
o
C
= 1 0 0 V
8
4
1 . 0
V
DS
= 4 0 V
IRL630A
1 . 2
@ N o t e s :
1 2
@ N o t e s : I
1 . V
2 . V
3 . 2 5 0 s P u l s e T e s t
6
@ N o t e s :
1 . V
2 . 2 5 0 s P u l s e T e s t
GS
DS
GS
= 0 V
= 4 0 V
1 . 4
= 0 V
D
= 9 A
1 6
8
1 . 6
1 . 8
2 0
1 0
3