FQD2P40TF Fairchild Semiconductor, FQD2P40TF Datasheet - Page 5
![MOSFET P-CH 400V 1.56A DPAK](/photos/5/38/53880/261-dpak_sml.jpg)
FQD2P40TF
Manufacturer Part Number
FQD2P40TF
Description
MOSFET P-CH 400V 1.56A DPAK
Manufacturer
Fairchild Semiconductor
Series
QFET™r
Specifications of FQD2P40TF
Fet Type
MOSFET P-Channel, Metal Oxide
Fet Feature
Standard
Rds On (max) @ Id, Vgs
6.5 Ohm @ 780mA, 10V
Drain To Source Voltage (vdss)
400V
Current - Continuous Drain (id) @ 25° C
1.56A
Vgs(th) (max) @ Id
5V @ 250µA
Gate Charge (qg) @ Vgs
13nC @ 10V
Input Capacitance (ciss) @ Vds
350pF @ 25V
Power - Max
2.5W
Mounting Type
Surface Mount
Package / Case
DPak, TO-252 (2 leads+tab), SC-63
Configuration
Single
Transistor Polarity
P-Channel
Resistance Drain-source Rds (on)
5 Ohms
Forward Transconductance Gfs (max / Min)
1.26 S
Drain-source Breakdown Voltage
- 400 V
Gate-source Breakdown Voltage
+/- 30 V
Continuous Drain Current
- 1.56 A
Power Dissipation
2.5 W
Maximum Operating Temperature
+ 150 C
Mounting Style
SMD/SMT
Minimum Operating Temperature
- 55 C
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
©2008 Fairchild Semiconductor International
-10V
-10V
-10V
-10V
12V
12V
t
t
p
p
-3mA
-3mA
200nF
200nF
R
R
R
R
G
G
G
G
50KΩ
50KΩ
V
V
V
V
GS
GS
GS
GS
Unclamped Inductive Switching Test Circuit & Waveforms
V
V
300nF
300nF
V
V
I
I
I
DS
DS
DS
DS
Resistive Switching Test Circuit & Waveforms
D
D
D
Gate Charge Test Circuit & Waveform
DUT
DUT
DUT
DUT
Same Type
Same Type
DUT
DUT
as DUT
as DUT
R
R
L
L L
L
L
V
V
DD
DD
V
V
DD
DD
V
V
DS
DS
BV
BV
-10V
-10V
V
V
V
V
DSS
DSS
I
I
V
V
V
V
GS
GS
DD
DD
AS
AS
GS
GS
DS
DS
E
E
E
10%
10%
AS
AS
AS
Q
Q
90%
90%
=
=
=
gs
gs
t
t
d(on)
d(on)
----
----
----
----
1
1
1
1
2
2
2
2
t
t
L I
L I
L I
on
on
I
I
D
D
t
t
r
r
AS
AS
AS
(t)
(t)
t
t
2
2
2
Q
Q
p
p
Q
Q
g
g
gd
gd
--------------------
--------------------
Charge
Charge
BV
BV
BV
BV
DSS
DSS
DSS
DSS
- V
- V
t
t
d(off)
d(off)
DD
DD
t
t
Time
Time
off
off
t
t
f
f
Rev. A3, October 2008
V
V
DS
DS
(t)
(t)