FQD2P40TF Fairchild Semiconductor, FQD2P40TF Datasheet - Page 2
![MOSFET P-CH 400V 1.56A DPAK](/photos/5/38/53880/261-dpak_sml.jpg)
FQD2P40TF
Manufacturer Part Number
FQD2P40TF
Description
MOSFET P-CH 400V 1.56A DPAK
Manufacturer
Fairchild Semiconductor
Series
QFET™r
Specifications of FQD2P40TF
Fet Type
MOSFET P-Channel, Metal Oxide
Fet Feature
Standard
Rds On (max) @ Id, Vgs
6.5 Ohm @ 780mA, 10V
Drain To Source Voltage (vdss)
400V
Current - Continuous Drain (id) @ 25° C
1.56A
Vgs(th) (max) @ Id
5V @ 250µA
Gate Charge (qg) @ Vgs
13nC @ 10V
Input Capacitance (ciss) @ Vds
350pF @ 25V
Power - Max
2.5W
Mounting Type
Surface Mount
Package / Case
DPak, TO-252 (2 leads+tab), SC-63
Configuration
Single
Transistor Polarity
P-Channel
Resistance Drain-source Rds (on)
5 Ohms
Forward Transconductance Gfs (max / Min)
1.26 S
Drain-source Breakdown Voltage
- 400 V
Gate-source Breakdown Voltage
+/- 30 V
Continuous Drain Current
- 1.56 A
Power Dissipation
2.5 W
Maximum Operating Temperature
+ 150 C
Mounting Style
SMD/SMT
Minimum Operating Temperature
- 55 C
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Change To
Product Id Description : All devices packaged in D/I-PAK(Non JEDEC TYPE)
Affected FSIDs :
FJD3076TF_NL
FQD10N20CTF_NL
FJD3076TM
FQD10N20CTM
FQD10N20CTF
FQD10N20CTM_NL
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