RFD16N05SM9A Fairchild Semiconductor, RFD16N05SM9A Datasheet

MOSFET N-CH 50V 16A TO-252AA

RFD16N05SM9A

Manufacturer Part Number
RFD16N05SM9A
Description
MOSFET N-CH 50V 16A TO-252AA
Manufacturer
Fairchild Semiconductor
Datasheet

Specifications of RFD16N05SM9A

Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Standard
Rds On (max) @ Id, Vgs
47 mOhm @ 16A, 10V
Drain To Source Voltage (vdss)
50V
Current - Continuous Drain (id) @ 25° C
16A
Vgs(th) (max) @ Id
4V @ 250µA
Gate Charge (qg) @ Vgs
80nC @ 20V
Input Capacitance (ciss) @ Vds
900pF @ 25V
Power - Max
72W
Mounting Type
Surface Mount
Package / Case
DPak, TO-252 (2 leads+tab), SC-63
Configuration
Single
Transistor Polarity
N-Channel
Resistance Drain-source Rds (on)
0.047 Ohms
Drain-source Breakdown Voltage
50 V
Gate-source Breakdown Voltage
+/- 20 V
Continuous Drain Current
16 A
Power Dissipation
72 W
Maximum Operating Temperature
+ 175 C
Mounting Style
SMD/SMT
Minimum Operating Temperature
- 55 C
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
RFD16N05SM9ATR

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
RFD16N05SM9A
Manufacturer:
Excelitas Technologies Corporation
Quantity:
1 000
Part Number:
RFD16N05SM9A
Manufacturer:
FSC
Quantity:
78
©2003 Fairchild Semiconductor Corporation
16A, 50V, 0.047 Ohm, N-Channel Power
MOSFETs
The RFD16N05 and RFD16N05SM N-channel power
MOSFETs are manufactured using the MegaFET process.
This process, which uses feature sizes approaching those of
LSI integrated circuits, gives optimum utilization of silicon,
resulting in outstanding performance. They were designed
for use in applications such as switching regulators,
switching converters, motor drivers, and relay drivers. These
transistors can be operated directly from integrated circuits.
Formerly developmental type TA09771.
Ordering Information
NOTE: When ordering, use the entire part number. Add the suffix 9A to
obtain the TO-252AA variant in the tape and reel, i.e., RFD16N05SM9A.
Packaging
RFD16N05
RFD16N05SM
PART NUMBER
DRAIN (FLANGE)
TO-251AA
TO-252AA
JEDEC TO-251AA
PACKAGE
Data Sheet
SOURCE
D16N05
D16N05
DRAIN
GATE
BRAND
Features
• 16A, 50V
• r
• Temperature Compensating PSPICE
• Peak Current vs Pulse Width Curve
• UIS Rating Curve
• 175
• Related Literature
Symbol
- TB334 “Guidelines for Soldering Surface Mount
DS(ON)
Components to PC Boards”
November 2003
o
C Operating Temperature
RFD16N05, RFD16N05SM
= 0.047
SOURCE
GATE
JEDEC TO-252AA
G
DRAIN (FLANGE)
D
S
RFD16N05, RFD16N05SM Rev. B1
®
Model

Related parts for RFD16N05SM9A

RFD16N05SM9A Summary of contents

Page 1

... PART NUMBER PACKAGE RFD16N05 TO-251AA RFD16N05SM TO-252AA NOTE: When ordering, use the entire part number. Add the suffix 9A to obtain the TO-252AA variant in the tape and reel, i.e., RFD16N05SM9A. Packaging JEDEC TO-251AA DRAIN (FLANGE) ©2003 Fairchild Semiconductor Corporation November 2003 Features • ...

Page 2

... Diode Reverse Recovery Time NOTES: 2. Pulse test: pulse width 250 s, duty cycle 2%. 3. Repetitive rating: pulse width limited by maximum junction temperature. See Transient Thermal Impedance curve (Figure 3) and Peak Current Capability Curve (Figure 5). ©2003 Fairchild Semiconductor Corporation Unless Otherwise Specified C J, ...

Page 3

... FIGURE 3. NORMALIZED MAXIMUM TRANSIENT THERMAL IMPEDANCE 100 10 OPERATION IN THIS AREA MAY BE LIMITED BY r DS(ON) V DSS(MAX DRAIN TO SOURCE VOLTAGE (V) DS FIGURE 4. FORWARD BIAS SAFE OPERATING AREA ©2003 Fairchild Semiconductor Corporation Unless Otherwise Specified 125 150 175 FIGURE 2. MAXIMUM CONTINUOUS DRAIN CURRENT ...

Page 4

... DUTY CYCLE = 0.5% MAX GATE TO SOURCE VOLTAGE (V) GS FIGURE 8. TRANSFER CHARACTERISTICS 2 250 1.5 1.0 0.5 0 -80 - JUNCTION TEMPERATURE ( J FIGURE 10. NORMALIZED GATE THRESHOLD VOLTAGE vs JUNCTION TEMPERATURE ©2003 Fairchild Semiconductor Corporation Unless Otherwise Specified (Continued STARTING +1] DSS 175 FIGURE 9. NORMALIZED DRAIN TO SOURCE ON 120 200 160 ...

Page 5

... DRAIN TO SOURCE VOLTAGE (V) DS FIGURE 12. CAPACITANCE vs DRAIN TO SOURCE VOLTAGE Test Circuits and Waveforms VARY t TO OBTAIN P R REQUIRED PEAK FIGURE 14. UNCLAMPED ENERGY TEST CIRCUIT FIGURE 16. SWITCHING TIME TEST CIRCUIT ©2003 Fairchild Semiconductor Corporation Unless Otherwise Specified (Continued 0V 1MHz ISS RSS GD 37 OSS DS GS 12.5 15 ...

Page 6

... Test Circuits and Waveforms G(REF) FIGURE 18. GATE CHARGE TEST CIRCUIT ©2003 Fairchild Semiconductor Corporation (Continued DUT G(REF g(TOT g(10 10V GS Q g(TH) FIGURE 19. GATE CHARGE WAVEFORM RFD16N05, RFD16N05SM Rev 20V GS ...

Page 7

... S2BMOD VSWITCH (RON = 1e-5 ROFF = 0.1 VON = 5.56 VOFF= 0.56) .ENDS NOTE: For further discussion of the PSPICE model, consult A New PSPICE Sub-Circuit for the Power MOSFET Featuring Global Temperature Options; written by William J. Hepp and C. Frank Wheatley. ©2003 Fairchild Semiconductor Corporation DPLCAP 10 RSCL2 ...

Page 8

... TRADEMARKS The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended exhaustive list of all such trademarks. ACEx™ FACT Quiet Series™ ActiveArray™ FAST Bottomless™ FASTr™ CoolFET™ FRFET™ CROSSVOLT™ ...

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