FQD12N20LTM Fairchild Semiconductor, FQD12N20LTM Datasheet - Page 3

• Manufacturer Part Number: FQD12N20LTM
• Description: MOSFET N-CH 200V 9A DPAK
• Manufacturer: Fairchild Semiconductor
• Series: QFET™r

Specifications of FQD12N20LTM

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 280 mOhm @ 4.5A, 10V
• Drain To Source Voltage (vdss): 200V
• Current - Continuous Drain (id) @ 25° C: 9A
• Vgs(th) (max) @ Id: 2V @ 250µA
• Gate Charge (qg) @ Vgs: 21nC @ 5V
• Input Capacitance (ciss) @ Vds: 1080pF @ 25V
• Power - Max: 2.5W
• Mounting Type: Surface Mount
• Package / Case: DPak, TO-252 (2 leads+tab), SC-63
• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 0.28 Ohm @ 10 V
• Forward Transconductance Gfs (max / Min): 11.6 S
• Drain-source Breakdown Voltage: 200 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 9 A
• Power Dissipation: 2500 mW
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Minimum Operating Temperature: - 55 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: FQD12N20LTM; FQD12N20LTMTR

©2009 Fairchild Semiconductor Corporation
Typical Characteristics
1800
1500
1200
10
1.5
1.2
0.9
0.6
0.3
0.0
900
600
300
10
10
0
-1
1
0
10
10
0
Figure 5. Capacitance Characteristics
Figure 3. On-Resistance Variation vs.
-1
-1
Top :
Bottom :
Figure 1. On-Region Characteristics
Drain Current and Gate Voltage
10 V
8.0 V
6.0 V
5.0 V
4.5 V
4.0 V
3.5 V
3.0 V
V
6
GS
V
V
DS
DS
12
, Drain-Source Voltage [V]
, Drain-Source Voltage [V]
I
D
10
, Drain Current [A]
0
10
V
0
GS
C
C
C
= 10V
oss
iss
rss
18
V
GS
= 5 V
24
C
C
C
※ Notes :
iss
oss
rss
1. 250 μ s Pulse Test
2. T
= C
= C
= C
10
C
gs
gd
ds
= 25 ℃
1
+ C
+ C
10
gd
gd
(C
1
30
※ Notes :
ds
1. V
2. f = 1 MHz
= shorted)
GS
= 0 V
36
10
10
10
10
12
10
10
10
8
6
4
2
0
-1
1
0
-1
1
0
0.2
0
0
Figure 6. Gate Charge Characteristics
Figure 4. Body Diode Forward Voltage
25℃
150℃
Figure 2. Transfer Characteristics
0.4
Variation vs. Source Current
5
150℃
2
0.6
V
V
Q
V
and Temperature
25℃
GS
DS
-55℃
SD
G
10
, Gate-Source Voltage [V]
V
, Total Gate Charge [nC]
, Source-Drain voltage [V]
= 160V
DS
0.8
= 100V
V
4
DS
= 40V
1.0
15
6
1.2
20
※ Notes :
※ Notes :
1. V
2. 250μ s Pulse Test
1. V
2. 250 μ s Pulse Test
1.4
※ Note : I
DS
GS
= 0V
= 30V
8
25
D
1.6
= 11.6 A
Rev. A2, January 2009
1.8
10
30