NDT452AP Fairchild Semiconductor, NDT452AP Datasheet - Page 6

• Manufacturer Part Number: NDT452AP
• Description: MOSFET P-CH 30V 5A SOT-223-4
• Manufacturer: Fairchild Semiconductor
• Type: Power MOSFETr

Specifications of NDT452AP

• Fet Type: MOSFET P-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 65 mOhm @ 5A, 10V
• Drain To Source Voltage (vdss): 30V
• Current - Continuous Drain (id) @ 25° C: 5A
• Vgs(th) (max) @ Id: 2.8V @ 250µA
• Gate Charge (qg) @ Vgs: 30nC @ 10V
• Input Capacitance (ciss) @ Vds: 690pF @ 15V
• Power - Max: 1.1W
• Mounting Type: Surface Mount
• Package / Case: SOT-223 (3 leads + Tab), SC-73, TO-261
• Number Of Elements: 1
• Polarity: P
• Channel Mode: Enhancement
• Drain-source On-res: 0.065Ohm
• Drain-source On-volt: 30V
• Gate-source Voltage (max): ±20V
• Drain Current (max): 5A
• Power Dissipation: 3W
• Output Power (max): Not RequiredW
• Frequency (max): Not RequiredMHz
• Noise Figure: Not RequireddB
• Power Gain: Not RequireddB
• Drain Efficiency: Not Required%
• Operating Temp Range: -65C to 150C
• Operating Temperature Classification: Military
• Mounting: Surface Mount
• Pin Count: 3 +Tab
• Package Type: SOT-223
• Configuration: Single Dual Drain
• Transistor Polarity: P-Channel
• Resistance Drain-source Rds (on): 0.065 Ohm @ 10 V
• Forward Transconductance Gfs (max / Min): 7 S
• Drain-source Breakdown Voltage: 30 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 5 A
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Minimum Operating Temperature: - 65 C
• Continuous Drain Current Id: 5A
• Drain Source Voltage Vds: 30V
• On Resistance Rds(on): 65mohm
• Rds(on) Test Voltage Vgs: -10V
• Threshold Voltage Vgs Typ: 1.6V
• Rohs Compliant: Yes
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: NDT452APTR

Typical Thermal Characteristics
Figure 13. Transconductance Variation with Drain
0.005
0.002
0.001
6
5
4
3
2
0.05
0.02
0.01
Figure 15. Maximum Steady-State Drain
1 2
0.5
0.2
0.1
0
0.0001
9
6
3
0
1
1c
0
1 b
Current and Temperature.
V
Current versus Copper Mounting Pad
Area.
DS
D = 0.5
0.2
0.05
0.02
= -10V
0.01
0.1
Single Pulse
0.2
2oz COPPER MOUNTING PAD AREA (in
-4
0.001
I
D
0.4
Figure 17. Transient Thermal Response Curve
Note: Thermal characterization performed using the conditions described in note 1c. Transient thermal response will change
, DRAIN CURRENT (A)
-8
depending on the circuit board design.
T
J
0.6
= -55°C
-12
0.01
4.5"x5" FR-4 Board
T
Still Air
V
25°C
A
G S
= 2 5 C
= - 1 0 V
2
0.8
)
125°C
-16
o
1a
1
-20
0.1
t , TIME (sec)
1
Figure 16. Maximum Safe Operating Area.
0.05
0.01
0.5
0.1
5 0
2 0
1 0
Figure 14. SOT-223 Maximum Steady- tate
5
1
3.5
2.5
1.5
0.5
0.1
3
2
1
0
1c
R
1 b
Power Dissipation versus Copper
Mounting Pad Area.
0.2
SINGLE PULSE
J A
V
T
GS
= See Note 1c
.
A
1
= 25°C
0.2
= -10V
- V
2oz COPPER MOUNTING PAD AREA (in
0.5
DS
, DRAIN-SOURCE CURRENT (V)
1
0.4
2
P(pk)
1 0
T - T
R
Duty Cycle, D = t
J
R
5
0.6
JA
JA
t
1
A
(t) = r(t) * R
t
= P * R
= See Note 1 c
2
1 0
4.5"x5" FR-4 Board
T
Still Air
A
= 2 5 C
2
0.8
)
o
JA
1
1 0 0
/ t
3 0
JA
(t)
NDT452AP Rev. B1
2
5 0
1a
1
3 0 0