FQB11P06TM Fairchild Semiconductor, FQB11P06TM Datasheet

MOSFET P-CH 60V 11.4A D2PAK

FQB11P06TM

Manufacturer Part Number
FQB11P06TM
Description
MOSFET P-CH 60V 11.4A D2PAK
Manufacturer
Fairchild Semiconductor
Series
QFET™r
Datasheets

Specifications of FQB11P06TM

Fet Type
MOSFET P-Channel, Metal Oxide
Fet Feature
Standard
Rds On (max) @ Id, Vgs
175 mOhm @ 5.7A, 10V
Drain To Source Voltage (vdss)
60V
Current - Continuous Drain (id) @ 25° C
11.4A
Vgs(th) (max) @ Id
4V @ 250µA
Gate Charge (qg) @ Vgs
17nC @ 10V
Input Capacitance (ciss) @ Vds
550pF @ 25V
Power - Max
3.13W
Mounting Type
Surface Mount
Package / Case
D²Pak, TO-263 (2 leads + tab)
Configuration
Single
Transistor Polarity
P-Channel
Resistance Drain-source Rds (on)
0.175 Ohm @ 10 V
Forward Transconductance Gfs (max / Min)
5.1 S
Drain-source Breakdown Voltage
60 V
Gate-source Breakdown Voltage
+/- 25 V
Continuous Drain Current
11.4 A
Power Dissipation
3130 mW
Maximum Operating Temperature
+ 175 C
Mounting Style
SMD/SMT
Minimum Operating Temperature
- 55 C
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
©2008 Fairchild Semiconductor Corporation
FQB11P06 / FQI11P06
60V P-Channel MOSFET
General Description
These P-Channel enhancement mode power field effect
transistors are produced using Fairchild’s proprietary,
planar stripe, DMOS technology.
This advanced technology has been especially tailored to
minimize on-state resistance, provide superior switching
performance, and withstand a high energy pulse in the
avalanche and commutation modes. These devices are
well suited for low voltage applications such as automotive,
DC/DC converters, and high efficiency switching for power
management in portable and battery operated products.
Absolute Maximum Ratings
Thermal Characteristics
* When mounted on the minimum pad size recommended (PCB Mount)
V
I
I
V
E
I
E
dv/dt
P
T
T
R
R
R
D
DM
AR
J
L
Symbol
DSS
GSS
AS
AR
D
Symbol
, T
JC
JA
JA
STG
G
Drain-Source Voltage
Drain Current
Drain Current
Gate-Source Voltage
Single Pulsed Avalanche Energy
Avalanche Current
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt
Power Dissipation (T
Power Dissipation (T
Operating and Storage Temperature Range
Maximum lead temperature for soldering purposes,
1/8" from case for 5 seconds
Thermal Resistance, Junction-to-Case
Thermal Resistance, Junction-to-Ambient *
Thermal Resistance, Junction-to-Ambient
S
D
FQB Series
2
-PAK
D
- Continuous (T
- Continuous (T
- Pulsed
- Derate above 25°C
A
C
Parameter
Parameter
= 25°C) *
= 25°C)
T
G
C
C
C
= 25°C unless otherwise noted
= 25°C)
= 100°C)
D
S
(Note 1)
(Note 2)
(Note 1)
(Note 1)
(Note 3)
Features
• -11.4A, -60V, R
• Low gate charge ( typical 13 nC)
• Low Crss ( typical 45 pF)
• Fast switching
• 100% avalanche tested
• Improved dv/dt capability
• 175 C maximum junction temperature rating
• RoHS Compliant
I
FQI Series
2
-PAK
FQB11P06 / FQI11P06
Typ
--
--
--
DS(on)
-55 to +175
= 0.175
-11.4
-8.05
-45.6
-11.4
3.13
0.35
160
-7.0
300
-60
5.3
53
25
G
! ! ! !
! ! ! !
Max
2.85
62.5
@V
40
GS
▶ ▶ ▶ ▶
▶ ▶ ▶ ▶
! ! ! !
! ! ! !
S
! ! ! !
! ! ! !
D
● ●
● ●
● ●
● ●
● ●
● ●
October 2008
= -10 V
QFET
▲ ▲ ▲ ▲
▲ ▲ ▲ ▲
Units
W/°C
Units
Rev. B6, Oct 2008
°C/W
°C/W
°C/W
V/ns
mJ
mJ
°C
°C
W
W
V
A
A
A
V
A
®

Related parts for FQB11P06TM

FQB11P06TM Summary of contents

Page 1

... Thermal Resistance, Junction-to-Ambient * JA R Thermal Resistance, Junction-to-Ambient JA * When mounted on the minimum pad size recommended (PCB Mount) ©2008 Fairchild Semiconductor Corporation Features • -11.4A, -60V, R • Low gate charge ( typical 13 nC) • Low Crss ( typical 45 pF) • Fast switching • 100% avalanche tested • ...

Page 2

... Repetitive Rating : Pulse width limited by maximum junction temperature 1.44mH -11.4A -25V -11.4A, di/dt 300A Starting DSS, 4. Pulse Test : Pulse width 300 s, Duty cycle 5. Essentially independent of operating temperature ©2008 Fairchild Semiconductor Corporation T = 25°C unless otherwise noted C Test Conditions -250 -250 A, Referenced to 25° - - 150° ...

Page 3

... D Figure 3. On-Resistance Variation vs. Drain Current and Gate Voltage 1200 1000 800 C oss C iss 600 400 C rss 200 Drain-Source Voltage [V] DS Figure 5. Capacitance Characteristics ©2008 Fairchild Semiconductor Corporation ℃ 10 Notes : ※ 1. 250µ s Pulse Test ℃ Figure 2. Transfer Characteristics ※ Note : ℃ ...

Page 4

... Notes : 175 Single Pulse - Drain-Source Voltage [V] DS Figure 9. Maximum Safe Operating Area ©2008 Fairchild Semiconductor Corporation (Continued) 2.5 2.0 1.5 1.0 Notes : ※ 0 -250 µ 0.0 100 150 200 -100 o C] Figure 8. On-Resistance Variation 12 10 100 Figure 10. Maximum Drain Current ※ ...

Page 5

... Resistive Switching Test Circuit & Waveforms -10V -10V Unclamped Inductive Switching Test Circuit & Waveforms -10V -10V ©2008 Fairchild Semiconductor Corporation Gate Charge Test Circuit & Waveform Same Type Same Type as DUT as DUT -10V -10V DUT DUT DUT DUT ...

Page 6

... Peak Diode Recovery dv/dt Test Circuit & Waveforms Driver ) ( Driver ) DUT ) ( DUT ) DUT ) ( DUT ) ©2008 Fairchild Semiconductor Corporation + + DUT DUT Driver Driver Compliment of DUT Compliment of DUT (N-Channel) (N-Channel) • dv/dt controlled by R • dv/dt controlled by R • I • I controlled by pulse period ...

Page 7

... Mechanical Dimensions ©2008 Fairchild Semiconductor Corporation PAK Dimensions in Millimeters Rev. B6, Oct 2008 ...

Page 8

... Mechanical Dimensions ©2008 Fairchild Semiconductor Corporation PAK Dimensions in Millimeters Rev.B6, Oct 2008 ...

Page 9

... TRADEMARKS The following includes registered and unregistered trademarks and service marks, owned by Fairchild Semiconductor and/or its global subsidiaries, and is not intended exhaustive list of all such trademarks. Build it Now™ CorePLUS™ CorePOWER™ CROSSVOLT™ CTL™ Current Transfer Logic™ ...

Related keywords