FQP6N40C Fairchild Semiconductor, FQP6N40C Datasheet - Page 4

• Manufacturer Part Number: FQP6N40C
• Description: MOSFET N-CH 400V 6A TO-220
• Manufacturer: Fairchild Semiconductor
• Series: QFET™r

Specifications of FQP6N40C

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 1 Ohm @ 3A, 10V
• Drain To Source Voltage (vdss): 400V
• Current - Continuous Drain (id) @ 25° C: 6A
• Vgs(th) (max) @ Id: 4V @ 250µA
• Gate Charge (qg) @ Vgs: 20nC @ 10V
• Input Capacitance (ciss) @ Vds: 625pF @ 25V
• Power - Max: 73W
• Mounting Type: Through Hole
• Package / Case: TO-220-3 (Straight Leads)
• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 1 Ohm @ 10 V
• Forward Transconductance Gfs (max / Min): 4.7 S
• Drain-source Breakdown Voltage: 400 V
• Gate-source Breakdown Voltage: +/- 30 V
• Continuous Drain Current: 6 A
• Power Dissipation: 73000 mW
• Maximum Operating Temperature: + 150 C
• Mounting Style: Through Hole
• Minimum Operating Temperature: - 55 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

©2003 Fairchild Semiconductor Corporation
Typical Characteristics
1.2
1.1
1.0
0.9
0.8
Figure 9-1. Maximum Safe Operating Area
6
5
4
3
2
1
0
10
10
10
10
10
25
-100
-1
-2
2
1
0
Figure 7. Breakdown Voltage Variation
10
0
Figure 10. Maximum Drain Current
Operation in This Area
is Limited by R
-50
50
vs Case Temperature
T
T
vs Temperature
V
J
DS(on)
C
, Junction Temperature [
10
DS
for FQP6N40C
, Case Temperature [ ℃ ]
0
1
, Drain-Source Voltage [V]
※ Notes :
1. T
2. T
3. Single Pulse
75
C
J
= 150
= 25
o
DC
C
o
50
C
100 ms
100
10 ms
10
(Continued)
100
2
1 ms
o
C]
100 s
※ Notes :
1. V
2. I
125
D
G S
= 250 μ A
150
= 0 V
10 s
10
150
3
200
Figure 9-2. Maximum Safe Operating Area
10
10
10
10
10
3.0
2.5
2.0
1.5
1.0
0.5
0.0
-1
-2
2
1
0
-100
10
0
Figure 8. On-Resistance Variation
-50
V
for FQPF6N40C
T
10
vs Temperature
DS
J
, Junction Temperature [
1
, Drain-Source Voltage [V]
0
Operation in This Area
is Limited by R
DC
※ Notes :
DS(on)
50
1. T
2. T
3. Single Pulse
100 ms
C
J
= 25
= 150
10 ms
o
C
1 ms
o
10
C
2
100
100 s
o
C]
※ Notes :
10 s
1. V
2. I
150
D
GS
= 3 A
= 10 V
10
3
200
Rev. A, May 2003