SI7123DN-T1-GE3 Vishay, SI7123DN-T1-GE3 Datasheet - Page 4

• Manufacturer Part Number: SI7123DN-T1-GE3
• Description: MOSFET P-CH 20V 25A 1212-8
• Manufacturer: Vishay

Specifications of SI7123DN-T1-GE3

• Transistor Polarity: P-Channel
• Fet Type: MOSFET P-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 10.6 mOhm @ 15A, 4.5V
• Drain To Source Voltage (vdss): 20V
• Current - Continuous Drain (id) @ 25° C: 25A
• Vgs(th) (max) @ Id: 1V @ 250µA
• Gate Charge (qg) @ Vgs: 90nC @ 4.5V
• Input Capacitance (ciss) @ Vds: 3729pF @ 10V
• Power - Max: 52W
• Mounting Type: Surface Mount
• Package / Case: PowerPAK® 1212-8
• Minimum Operating Temperature: - 55 C
• Configuration: Single Quad Drain Triple Source
• Resistance Drain-source Rds (on): 0.0106 Ohm @ 4.5 V
• Drain-source Breakdown Voltage: 20 V
• Gate-source Breakdown Voltage: +/- 8 V
• Continuous Drain Current: 16 A
• Power Dissipation: 1500 mW
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Continuous Drain Current Id: -25A
• Drain Source Voltage Vds: -20V
• On Resistance Rds(on): 18.9mohm
• Rds(on) Test Voltage Vgs: 8V
• Threshold Voltage Vgs Typ: -1V
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Lead free / RoHS Compliant
• Other names: SI7123DN-T1-GE3TR

Si7123DN
Vishay Siliconix
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
www.vishay.com
4
0.001
- 0.1
- 0.2
0.01
100
0.4
0.3
0.2
0.1
0.0
0.1
10
1
- 50
0
- 25
Source-Drain Diode Forward Voltage
0.2
V
SD
0
Threshold Voltage
- Source-to-Drain Voltage (V)
T
J
25
- Temperature (°C)
0.4
T
J
= 150 °C
50
I
0.001
D
0.01
100
0.6
= - 250 µA
0.1
10
75
1
0.01
Safe Operating Area, Junction-to-Ambient
* V
Limited by R
100
T
J
GS
0.8
= 25 °C
Single Pulse
> minimum V
T
125
C
V
0.1
DS
= 25 °C
DS(on)
- Drain-to-Source Voltage (V)
150
1.0
*
GS
at which R
1
DS(on)
10
0.04
0.03
0.02
0.01
is specified
50
40
30
20
10
0
0
0.01
1.3
10 ms
100 ms
1 s
10 s
DC
On-Resistance vs. Gate-to-Source Voltage
Single Pulse Power, Junction-to-Ambient
100
0.1
V
GS
2.3
- Gate-to-Source Voltage (V)
1.0
Time (s)
S10-0347-Rev. D, 15-Feb-10
3.3
Document Number: 69655
10
I
D
T
T
= - 15 A
A
100
A
4.3
= 150 °C
= 25 °C
1000