ZVN4424ASTOA Diodes Zetex, ZVN4424ASTOA Datasheet - Page 3

• Manufacturer Part Number: ZVN4424ASTOA
• Description: MOSFET N-CHAN 240V TO92-3
• Manufacturer: Diodes Zetex

Specifications of ZVN4424ASTOA

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 5.5 Ohm @ 500mA, 10V
• Drain To Source Voltage (vdss): 240V
• Current - Continuous Drain (id) @ 25° C: 260mA
• Vgs(th) (max) @ Id: 1.8V @ 1mA
• Input Capacitance (ciss) @ Vds: 200pF @ 25V
• Power - Max: 750mW
• Mounting Type: Through Hole
• Package / Case: TO-92-3 (Standard Body), TO-226
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Gate Charge (qg) @ Vgs: -

(1)*Measured under pulsed conditions. Pulse width=300 s. Duty cycle 2%
(3) Switching times measured with 50 source impedance and >5ns rise time on pulse generator
ELECTRICAL CHARACTERISTICS (at T
ZVN4424A/C
PARAMETER
Drain-Source
Breakdown Voltage
Gate-Source Threshold
Voltage
Gate-Body Leakage
Zero Gate Voltage Drain
Current
On-State Drain Current
Static Drain-Source
On-State Resistance
Forward
Transconductance (1) (2)
Input Capacitance (2)
Common Source Output
Capacitance (2)
Reverse Transfer
Capacitance (2)
Turn-On Delay Time
(2)(3)
Rise Time (2)(3)
Turn-Off Delay Time
(2)(3)
Fall Time (2)(3)
SYMBOL MIN.
BV
V
I
I
I
R
g
C
C
C
t
t
t
t
GSS
DSS
D(on)
d(on)
r
d(off)
f
GS(th)
DS(on)
fs
iss
oss
rss
DSS
240
0.8
0.8
0.4
amb
TYP
1.3
1.4
4
4.3
0.75
110
15
3.5
2.5
5
40
16
= 25°C unless otherwise stated).
MAX. UNIT CONDITIONS.
1.8
100
10
100
5.5
6
200
25
15
5
8
60
25
V
V
nA
A
S
pF
pF
pF
ns
ns
ns
ns
A
A
I
I
V
V
V
V
V
V
V
V
V
V
V
D
D
GS
DS
DS
GS
DS
GS
GS
DS
DS
DD
GEN
=1mA, V
=1mA, V
= 40V, V
=240 V, V
=190 V,
=0V, T=125°C
=10 V, V
=10V,I
=2.5V,I
=10V,I
=25V, V
=10V
50V, I
D
D
GS
DS
D
=500mA
=0.5A
D
GS
=100mA
(2)Sample Test
GS
=0V
=0.25A,
= V
DS
GS
=0V, f=1MHz
=10V
=0V
=0
GS