FQB2P25TM Fairchild Semiconductor, FQB2P25TM Datasheet - Page 5
![MOSFET P-CH 250V 2.3A D2PAK](/photos/26/99/269906/d2pak-2_sml.jpg)
FQB2P25TM
Manufacturer Part Number
FQB2P25TM
Description
MOSFET P-CH 250V 2.3A D2PAK
Manufacturer
Fairchild Semiconductor
Series
QFET™r
Specifications of FQB2P25TM
Fet Type
MOSFET P-Channel, Metal Oxide
Fet Feature
Standard
Rds On (max) @ Id, Vgs
4 Ohm @ 1.15A, 10V
Drain To Source Voltage (vdss)
250V
Current - Continuous Drain (id) @ 25° C
2.3A
Vgs(th) (max) @ Id
5V @ 250µA
Gate Charge (qg) @ Vgs
8.5nC @ 10V
Input Capacitance (ciss) @ Vds
250pF @ 25V
Power - Max
3.13W
Mounting Type
Surface Mount
Package / Case
D²Pak, TO-263 (2 leads + tab)
Configuration
Single
Transistor Polarity
P-Channel
Resistance Drain-source Rds (on)
3.15 Ohms
Forward Transconductance Gfs (max / Min)
1.2 S
Drain-source Breakdown Voltage
- 250 V
Gate-source Breakdown Voltage
+/- 30 V
Continuous Drain Current
- 2.3 A
Power Dissipation
3.13 W
Maximum Operating Temperature
+ 150 C
Mounting Style
SMD/SMT
Minimum Operating Temperature
- 55 C
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
©2000 Fairchild Semiconductor International
-10V
-10V
-10V
-10V
12V
12V
t
t
p
p
-3mA
-3mA
200nF
200nF
R
R
R
R
G
G
G
G
50K
50K
V
V
V
V
GS
GS
GS
GS
Unclamped Inductive Switching Test Circuit & Waveforms
V
V
300nF
300nF
V
V
I
I
I
DS
DS
Resistive Switching Test Circuit & Waveforms
D
D
D
DS
DS
Gate Charge Test Circuit & Waveform
DUT
DUT
DUT
DUT
Same Type
Same Type
DUT
DUT
as DUT
as DUT
L
L L
R
R
L
L
V
V
DD
DD
V
V
DD
DD
V
V
DS
DS
BV
BV
-10V
-10V
V
V
V
V
DSS
DSS
I
I
V
V
V
V
DD
DD
GS
GS
AS
AS
GS
GS
DS
DS
E
E
E
10%
10%
AS
AS
AS
Q
Q
90%
90%
=
=
=
gs
gs
t
t
d(on)
d(on)
----
----
----
----
1
1
1
1
2
2
2
2
t
t
L I
L I
L I
on
on
I
I
D
D
t
t
r
r
AS
AS
AS
(t)
(t)
t
t
2
2
2
Q
Q
p
p
Q
Q
g
g
--------------------
--------------------
gd
gd
Charge
Charge
BV
BV
BV
BV
DSS
DSS
DSS
DSS
- V
- V
t
t
d(off)
d(off)
DD
DD
t
t
Time
Time
off
off
t
t
f
f
V
V
Rev. A, April 2000
DS
DS
(t)
(t)