IRFR9210TRLPBF Vishay, IRFR9210TRLPBF Datasheet - Page 4
![MOSFET P-CH 200V 1.9A DPAK](/photos/5/46/54696/pkg_5973_sml.jpg)
IRFR9210TRLPBF
Manufacturer Part Number
IRFR9210TRLPBF
Description
MOSFET P-CH 200V 1.9A DPAK
Manufacturer
Vishay
Datasheet
1.IRFR9210.pdf
(8 pages)
Specifications of IRFR9210TRLPBF
Fet Type
MOSFET P-Channel, Metal Oxide
Fet Feature
Standard
Rds On (max) @ Id, Vgs
3 Ohm @ 1.1A, 10V
Drain To Source Voltage (vdss)
200V
Current - Continuous Drain (id) @ 25° C
1.9A
Vgs(th) (max) @ Id
4V @ 250µA
Gate Charge (qg) @ Vgs
8.9nC @ 10V
Input Capacitance (ciss) @ Vds
170pF @ 25V
Power - Max
2.5W
Mounting Type
Surface Mount
Package / Case
DPak, TO-252 (2 leads+tab), SC-63
Transistor Polarity
P Channel
Continuous Drain Current Id
-1.9A
Drain Source Voltage Vds
-200V
On Resistance Rds(on)
3ohm
Rds(on) Test Voltage Vgs
-10V
Leaded Process Compatible
Yes
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
IRFR9210, IRFU9210, SiHFR9210, SiHFU9210
Vishay Siliconix
Fig. 5 - Typical Capacitance vs. Drain-to-Source Voltage
Fig. 7 - Typical Source-Drain Diode Forward Voltage
Fig. 6 - Typical Gate Charge vs. Gate-to-Source Voltage
Fig. 8 - Maximum Safe Operating Area
www.vishay.com
Document Number: 91281
4
S10-1139-Rev. B, 17-May-10