FDD8896 Fairchild Semiconductor, FDD8896 Datasheet - Page 4
![MOSFET N-CH 30V 94A D-PAK](/photos/5/38/53880/261-dpak_sml.jpg)
FDD8896
Manufacturer Part Number
FDD8896
Description
MOSFET N-CH 30V 94A D-PAK
Manufacturer
Fairchild Semiconductor
Series
PowerTrench®r
Datasheet
1.FDD8896.pdf
(11 pages)
Specifications of FDD8896
Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Logic Level Gate
Rds On (max) @ Id, Vgs
5.7 mOhm @ 35A, 10V
Drain To Source Voltage (vdss)
30V
Current - Continuous Drain (id) @ 25° C
94A
Vgs(th) (max) @ Id
2.5V @ 250µA
Gate Charge (qg) @ Vgs
60nC @ 10V
Input Capacitance (ciss) @ Vds
2525pF @ 15V
Power - Max
80W
Mounting Type
Surface Mount
Package / Case
DPak, TO-252 (2 leads+tab), SC-63
Configuration
Single
Transistor Polarity
N-Channel
Resistance Drain-source Rds (on)
0.0057 Ohm @ 10 V
Drain-source Breakdown Voltage
30 V
Gate-source Breakdown Voltage
+/- 20 V
Continuous Drain Current
17 A
Power Dissipation
80000 mW
Maximum Operating Temperature
+ 175 C
Mounting Style
SMD/SMT
Minimum Operating Temperature
- 55 C
Case
TO-252
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
FDD8896
Manufacturer:
FAICHILD
Quantity:
1 460
Company:
Part Number:
FDD8896
Manufacturer:
FAIRCHILD
Quantity:
25 888
Company:
Part Number:
FDD8896
Manufacturer:
FAIRCHILD
Quantity:
30 000
Company:
Part Number:
FDD8896
Manufacturer:
FAIRCHILD
Quantity:
1 167
Part Number:
FDD8896
Manufacturer:
FAIRCHILD/仙童
Quantity:
20 000
Company:
Part Number:
FDD8896-NL
Manufacturer:
PMC
Quantity:
15
©2004 Fairchild Semiconductor Corporation
Typical Characteristics
Figure 9. Drain to Source On Resistance vs Gate
Figure 5. Forward Bias Safe Operating Area
100
1000
80
60
40
20
100
0
0.1
10
14
12
10
1.5
8
6
4
1
1
2
Figure 7. Transfer Characteristics
PULSE DURATION = 80 s
DUTY CYCLE = 0.5% MAX
V
DD
SINGLE PULSE
T
T
I
OPERATION IN THIS
D
J
C
LIMITED BY r
T
= MAX RATED
= 15V
= 1A
= 25
J
Voltage and Drain Current
= 175
AREA MAY BE
I
o
D
C
V
V
= 35A
GS
V
DS
o
2.0
GS
C
, GATE TO SOURCE VOLTAGE (V)
, DRAIN TO SOURCE VOLTAGE (V)
4
, GATE TO SOURCE VOLTAGE (V)
DS(ON)
T
J
= 25
o
C
2.5
6
10
PULSE DURATION = 80 s
DUTY CYCLE = 0.5% MAX
T
C
= 25°C unless otherwise noted
T
J
3.0
= -55
8
o
C
10ms
10 s
100 s
1ms
DC
3.5
60
10
NOTE: Refer to Fairchild Application Notes AN7514 and AN7515
100
500
100
Figure 10. Normalized Drain to Source On
Figure 6. Unclamped Inductive Switching
80
60
40
20
10
1.6
1.4
1.2
1.0
0.8
0.6
0
1
0.01
Resistance vs Junction Temperature
0
Figure 8. Saturation Characteristics
-80
DUTY CYCLE = 0.5% MAX
PULSE DURATION = 80 s
T
If R = 0
t
If R
t
AV
AV
PULSE DURATION = 80 s
DUTY CYCLE = 0.5% MAX
C
V
= 25
GS
= (L)(I
= (L/R)ln[(I
V
0
= 10V
-40
GS
o
C
V
AS
= 5V
DS
T
)/(1.3*RATED BV
0.1
0.2
J
t
, DRAIN TO SOURCE VOLTAGE (V)
, JUNCTION TEMPERATURE (
AV
AS
, TIME IN AVALANCHE (ms)
0
*R)/(1.3*RATED BV
Capability
STARTING T
40
0.4
1
DSS
J
= 150
80
- V
STARTING T
DD
DSS
o
)
V
C
- V
GS
120
FDD8896 / FDU8896 Rev. C1
DD
0.6
= 10V, I
10
o
C)
) +1]
V
V
GS
J
V
GS
= 25
GS
160
= 4V
D
= 2.5V
= 35A
= 3V
o
C
100
200
0.8