SI7309DN-T1-E3 Vishay, SI7309DN-T1-E3 Datasheet - Page 3

• Manufacturer Part Number: SI7309DN-T1-E3
• Description: MOSFET P-CH 60V 8A 1212-8
• Manufacturer: Vishay
• Series: TrenchFET®r

Specifications of SI7309DN-T1-E3

• Transistor Polarity: P-Channel
• Fet Type: MOSFET P-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 115 mOhm @ 3.9A, 10V
• Drain To Source Voltage (vdss): 60V
• Current - Continuous Drain (id) @ 25° C: 8A
• Vgs(th) (max) @ Id: 3V @ 250µA
• Gate Charge (qg) @ Vgs: 22nC @ 10V
• Input Capacitance (ciss) @ Vds: 600pF @ 30V
• Power - Max: 19.8W
• Mounting Type: Surface Mount
• Package / Case: PowerPAK® 1212-8
• Minimum Operating Temperature: - 65 C
• Configuration: Single Quad Drain Triple Source
• Resistance Drain-source Rds (on): 0.115 Ohm @ 10 V
• Drain-source Breakdown Voltage: 60 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 3.9 A
• Power Dissipation: 3200 mW
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Continuous Drain Current Id: -8A
• Drain Source Voltage Vds: -60V
• On Resistance Rds(on): 146mohm
• Rds(on) Test Voltage Vgs: 20V
• Threshold Voltage Vgs Typ: -3V
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Lead free / RoHS Compliant
• Other names: SI7309DN-T1-E3TR

TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
Document Number: 73434
S-83051-Rev. B, 29-Dec-08
0.30
0.25
0.20
0.15
0.10
0.05
0.00
10
16
12
20
On-Resistance vs. Drain Current and Gate Voltage
8
6
4
2
0
8
4
0
0
0
0
I
D
V
= 3.9 A
GS
3
V
1
4
DS
= 4.5 V
Output Characteristics
Q
- Drain-to-Source Voltage (V)
g
V
I
- Total Gate Charge (nC)
D
DS
- Drain Current (A)
Gate Charge
= 30 V
6
2
8
12
9
3
V
GS
= 10 thru 5 V
V
V
DS
GS
12
16
= 48 V
4
= 10 V
4 V
3 V
15
20
5
1000
800
600
400
200
1.8
1.6
1.4
1.2
1.0
0.8
0.6
5
4
3
2
1
0
0
- 50
0.0
0
On-Resistance vs. Junction Temperature
C
rss
- 25
0.5
V
I
D
GS
10
= 3.9 A
V
V
= 10 V, 4.5 V
DS
GS
Transfer Characteristics
1.0
C
T
0
oss
- Drain-to-Source Voltage (V)
- Gate-to-Source Voltage (V)
J
- Junction Temperature (°C)
20
Capacitance
1.5
25
T
C
25 °C
= 125 °C
2.0
30
50
Vishay Siliconix
C
iss
2.5
75
Si7309DN
40
www.vishay.com
100
3.0
50
- 55 °C
3.5
125
150
4.0
60
3