FQP6N40CF Fairchild Semiconductor, FQP6N40CF Datasheet - Page 2

• Manufacturer Part Number: FQP6N40CF
• Description: MOSFET N-CH 400V 6A TO-220
• Manufacturer: Fairchild Semiconductor
• Series: FRFET™r

Specifications of FQP6N40CF

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 1.1 Ohm @ 3A, 10V
• Drain To Source Voltage (vdss): 400V
• Current - Continuous Drain (id) @ 25° C: 6A
• Vgs(th) (max) @ Id: 4V @ 250µA
• Gate Charge (qg) @ Vgs: 20nC @ 10V
• Input Capacitance (ciss) @ Vds: 625pF @ 25V
• Power - Max: 73W
• Mounting Type: Through Hole
• Package / Case: TO-220-3 (Straight Leads)
• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 1.1 Ohms
• Forward Transconductance Gfs (max / Min): 4.7 S
• Drain-source Breakdown Voltage: 400 V
• Gate-source Breakdown Voltage: +/- 30 V
• Continuous Drain Current: 6 A
• Power Dissipation: 73 W
• Maximum Operating Temperature: + 150 C
• Mounting Style: Through Hole
• Minimum Operating Temperature: - 55 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

FQP6N40CF/FQPF6N40CF Rev. B
Package Marking and Ordering Information
Electrical Characteristics
Notes:
1. Repetitive Rating : Pulse width limited by maximum junction temperature
2. L = 13.7mH, I
3. I
4. Pulse Test : Pulse width ≤ 300µs, Duty cycle ≤ 2%
5. Essentially independent of operating temperature
Off Characteristics
BV
∆BV
∆T
I
I
I
On Characteristics
V
R
g
Dynamic Characteristics
C
C
C
Switching Characteristics
t
t
t
t
Q
Q
Q
Drain-Source Diode Characteristics and Maximum Ratings
I
I
V
t
Q
d(on)
d(off)
f
DSS
GSSF
GSSR
r
S
SM
rr
FS
GS(th)
DS(on)
iss
oss
rss
SD
SD
g
gs
gd
rr
Device Marking
J
DSS
Symbol
FQPF6N40CF
≤ 6A, di/dt ≤ 200A/µs, V
FQP6N40CF
DSS
/
AS
= 6A, V
Drain-Source Breakdown Voltage
Breakdown Voltage Temperature
Coefficient
Zero Gate Voltage Drain Current
Gate-Body Leakage Current, Forward
Gate-Body Leakage Current, Reverse
Gate Threshold Voltage
Static Drain-Source
On-Resistance
Forward Transconductance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Turn-On Delay Time
Turn-On Rise Time
Turn-Off Delay Time
Turn-Off Fall Time
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Maximum Continuous Drain-Source Diode Forward Current
Maximum Pulsed Drain-Source Diode Forward Current
Drain-Source Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
DD
= 50V, R
DD
≤ BV
FQPF6N40CF
FQP6N40CF
DSS,
G
Device
Parameter
= 25 Ω, Starting T
Starting T
J
= 25°C
T
C
J
= 25°C unless otherwise noted
= 25°C
Package
TO-220F
TO-220
V
I
V
V
V
V
V
V
V
V
f = 1.0 MHz
V
R
V
V
V
V
dI
D
GS
DS
DS
GS
GS
DS
GS
DS
DS
DD
DS
GS
GS
GS
G
F
= 250 µA, Referenced to 25°C
= 25 Ω
/ dt = 100 A/µs
= 0 V, I
= 400 V, V
= 320 V, T
= 30 V, V
= -30 V, V
= V
= 10 V, I
= 40 V, I
= 25 V, V
= 200 V, I
= 320 V, I
= 10 V
= 0 V, I
= 0 V, I
GS
2
Test Conditions
, I
D
S
S
D
D
D
= 250 µA
= 6 A
= 6 A,
GS
DS
D
D
= 250 µA
DS
= 3 A
GS
C
= 3 A
= 6 A,
= 6 A,
Reel Size
= 125°C
= 0 V
= 0 V,
= 0 V
= 0 V
-
-
(Note 4, 5)
(Note 4, 5)
(Note 4)
(Note 4)
Tape Width
Min.
400
2.0
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-
-
Typ.
0.54
0.12
480
0.9
4.7
2.3
8.2
80
15
13
65
21
38
16
70
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Max.
-100
100
625
105
140
4.0
1.1
1.4
10
20
35
55
85
20
24
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1
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6
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Quantity
www.fairchildsemi.com
50
50
Units
V/°C
µA
µA
nA
nA
nC
nC
nC
µC
pF
pF
pF
ns
ns
ns
ns
ns
Ω
V
V
S
A
A
V