FQD2N100TM Fairchild Semiconductor, FQD2N100TM Datasheet - Page 2

• Manufacturer Part Number: FQD2N100TM
• Description: MOSFET N-CH 1000V 1.6A DPAK
• Manufacturer: Fairchild Semiconductor
• Series: QFET™r
• Type: Power MOSFETr

Specifications of FQD2N100TM

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 9 Ohm @ 800mA, 10V
• Drain To Source Voltage (vdss): 1000V (1kV)
• Current - Continuous Drain (id) @ 25° C: 1.6A
• Vgs(th) (max) @ Id: 5V @ 250µA
• Gate Charge (qg) @ Vgs: 15.5nC @ 10V
• Input Capacitance (ciss) @ Vds: 520pF @ 25V
• Power - Max: 2.5W
• Mounting Type: Surface Mount
• Package / Case: DPak, TO-252 (2 leads+tab), SC-63
• Number Of Elements: 1
• Polarity: N
• Channel Mode: Enhancement
• Drain-source On-res: 9Ohm
• Drain-source On-volt: 1kV
• Gate-source Voltage (max): ±30V
• Drain Current (max): 1.6A
• Power Dissipation: 2.5W
• Output Power (max): Not RequiredW
• Frequency (max): Not RequiredMHz
• Noise Figure: Not RequireddB
• Power Gain: Not RequireddB
• Drain Efficiency: Not Required%
• Operating Temp Range: -55C to 150C
• Operating Temperature Classification: Military
• Mounting: Surface Mount
• Pin Count: 2 +Tab
• Package Type: DPAK
• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 9 Ohm @ 10 V
• Forward Transconductance Gfs (max / Min): 1.9 S
• Drain-source Breakdown Voltage: 1000 V
• Gate-source Breakdown Voltage: +/- 30 V
• Continuous Drain Current: 1.6 A
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Minimum Operating Temperature: - 55 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: FQD2N100TM

Change To
Product Id Description : All devices packaged in D/I-PAK(Non JEDEC TYPE)
Affected FSIDs :
FJD3076TF_NL
FQD10N20CTF_NL
FJD3076TM
FQD10N20CTM
FQD10N20CTF
FQD10N20CTM_NL
Pg. 2