FDD6685 Fairchild Semiconductor, FDD6685 Datasheet - Page 5

• Manufacturer Part Number: FDD6685
• Description: MOSFET P-CH 30V 11A DPAK
• Manufacturer: Fairchild Semiconductor
• Series: PowerTrench®r

Specifications of FDD6685

• Fet Type: MOSFET P-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 20 mOhm @ 11A, 10V
• Drain To Source Voltage (vdss): 30V
• Current - Continuous Drain (id) @ 25° C: 11A
• Vgs(th) (max) @ Id: 3V @ 250µA
• Gate Charge (qg) @ Vgs: 24nC @ 5V
• Input Capacitance (ciss) @ Vds: 1715pF @ 15V
• Power - Max: 1.6W
• Mounting Type: Surface Mount
• Package / Case: DPak, TO-252 (2 leads+tab), SC-63
• Configuration: Single
• Transistor Polarity: P-Channel
• Resistance Drain-source Rds (on): 0.02 Ohm @ 10 V
• Forward Transconductance Gfs (max / Min): 26 S
• Drain-source Breakdown Voltage: 30 V
• Gate-source Breakdown Voltage: +/- 25 V
• Continuous Drain Current: 11 A
• Power Dissipation: 52000 mW
• Maximum Operating Temperature: + 175 C
• Mounting Style: SMD/SMT
• Minimum Operating Temperature: - 55 C
• Fall Time: 21 ns
• Rise Time: 11 ns
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: FDD6685; FDD6685TR

Typical Characteristics
10
1000
0.01
8
6
4
2
0
100
Figure 9. Maximum Safe Operating Area.
0.1
10
Figure 7. Gate Charge Characteristics.
0
1
0.01
SINGLE PULSE
I
D
R
= -11.0 A
0.001
V
T
JA
0.01
GS
R
A
0.1
5
= 96
DS(ON)
= 25
1
= 10V
0.001
o
o
C/W
0.10
C
V
LIMIT
DS
, DRAIN-SOURCE VOLTAGE (V)
D = 0.5
10
0.2
Q
0.1
g
0.05
, GATE CHARGE (nC)
0.02
0.01
Thermal characterization performed using the conditions described in Note 1b.
Transient thermal response will change depending on the circuit board design.
1.00
15
SINGLE PULSE
V
0.01
DS
Figure 11. Transient Thermal Response Curve.
10s
DC
= 10V
1
100ms
10ms
20
1ms
10.00
20V
100µs
25
0.1
30V
100.00
30
t
1
, TIME (sec)
1
2400
1800
1200
100
600
80
60
40
20
0
0.01
0
Figure 8. Capacitance Characteristics.
0
Figure 10. Single Pulse Maximum
C
rss
5
0.1
10
V
Power Dissipation.
DS
, DRAIN TO SOURCE VOLTAGE (V)
10
C
oss
1
t
1
, TIME (sec)
P(pk)
Duty Cycle, D = t
T
R
J
100
15
R
- T
JA
JA
(t) = r(t) * R
A
t
1
= 96 °C/W
= P * R
t
2
10
C
20
iss
JA
1
JA
(t)
/ t
SINGLE PULSE
2
R
JA
T
100
1000
A
FDD6685 Rev D (W)
= 96°C/W
25
= 25°C
V
f = 1MHz
GS
= 0 V
1000
30