FQPF27P06 Fairchild Semiconductor, FQPF27P06 Datasheet - Page 4

• Manufacturer Part Number: FQPF27P06
• Description: MOSFET P-CH 60V 17A TO-220F
• Manufacturer: Fairchild Semiconductor
• Series: QFET™r

Specifications of FQPF27P06

• Fet Type: MOSFET P-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 70 mOhm @ 8.5A, 10V
• Drain To Source Voltage (vdss): 60V
• Current - Continuous Drain (id) @ 25° C: 17A
• Vgs(th) (max) @ Id: 4V @ 250µA
• Gate Charge (qg) @ Vgs: 43nC @ 10V
• Input Capacitance (ciss) @ Vds: 1400pF @ 25V
• Power - Max: 47W
• Mounting Type: Through Hole
• Package / Case: TO-220-3 Full Pack (Straight Leads)
• Configuration: Single
• Transistor Polarity: P-Channel
• Resistance Drain-source Rds (on): 0.07 Ohms
• Forward Transconductance Gfs (max / Min): 12 S
• Drain-source Breakdown Voltage: - 60 V
• Gate-source Breakdown Voltage: +/- 25 V
• Continuous Drain Current: 17 A
• Power Dissipation: 47 W
• Maximum Operating Temperature: + 175 C
• Mounting Style: Through Hole
• Minimum Operating Temperature: - 55 C
• Fall Time: 90 ns
• Rise Time: 185 ns
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

©2001 Fairchild Semiconductor Corporation
Typical Characteristics
10
1.2
1.1
1.0
0.9
0.8
10
10
10
Figure 9. Maximum Safe Operating Area
-100
-1
2
1
0
10
Figure 7. Breakdown Voltage Variation
0
-50
T
-V
vs. Temperature
J
, Junction Temperature [
DS
0
Operation in This Area
is Limited by R
, Drain-Source Voltage [V]
1 0
1 0
※ Notes :
1 0
1. T
2. T
3. Single Pulse
- 1
- 2
1 0
0
C
J
= 175
= 25
- 5
DC
0 .0 2
0 .0 1
o
D = 0 . 5
0 .0 5
0 .1
C
0 .2
o
10
50
DS(on)
C
1
100 ms
Figure 11. Transient Thermal Response Curve
100
10 ms
1 0
(Continued)
o
- 4
C]
s in g le p u ls e
※ Notes :
1. V
2. I
t
1 ms
1
, S q u a r e W a v e P u ls e D u r a t io n [ s e c ]
D
GS
= -250 μ A
150
= 0 V
1 0
- 3
200
10
2
1 0
- 2
2.5
2.0
1.5
1.0
0.5
0.0
18
15
12
9
6
3
0
-100
25
Figure 8. On-Resistance Variation
Figure 10. Maximum Drain Current
1 0
※ N o te s :
1 . Z
2 . D u ty F a c t o r , D = t
3 . T
- 1
P
-50
DM
50
θ
J M
J C
- T
vs. Case Temperature
( t ) = 3 . 1 9 ℃ /W M a x .
C
T
vs. Temperature
= P
J
T
t
, Junction Temperature [
1
C
75
t
0
, Case Temperature [ ℃ ]
1 0
2
D M
0
* Z
1
θ J C
/t
2
100
( t )
50
1 0
1
125
100
o
C]
※ Notes :
1. V
2. I
150
150
D
GS
= -13.5 A
= -10 V
Rev. A2. May 2001
200
175