FQPF50N06 Fairchild Semiconductor, FQPF50N06 Datasheet - Page 4

• Manufacturer Part Number: FQPF50N06
• Description: MOSFET N-CH 60V 31A TO-220F
• Manufacturer: Fairchild Semiconductor
• Series: QFET™r

Specifications of FQPF50N06

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 22 mOhm @ 15.5A, 10V
• Drain To Source Voltage (vdss): 60V
• Current - Continuous Drain (id) @ 25° C: 31A
• Vgs(th) (max) @ Id: 4V @ 250µA
• Gate Charge (qg) @ Vgs: 41nC @ 10V
• Input Capacitance (ciss) @ Vds: 1540pF @ 25V
• Power - Max: 47W
• Mounting Type: Through Hole
• Package / Case: TO-220-3 Full Pack (Straight Leads)
• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 0.022 Ohm @ 10 V
• Forward Transconductance Gfs (max / Min): 19 S
• Drain-source Breakdown Voltage: 60 V
• Gate-source Breakdown Voltage: +/- 25 V
• Continuous Drain Current: 31 A
• Power Dissipation: 47000 mW
• Maximum Operating Temperature: + 175 C
• Mounting Style: Through Hole
• Minimum Operating Temperature: - 55 C
• Continuous Drain Current Id: 31A
• Drain Source Voltage Vds: 60V
• On Resistance Rds(on): 22mohm
• Rds(on) Test Voltage Vgs: 10V
• Threshold Voltage Vgs Typ: 4V
• Rohs Compliant: Yes
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

©2001 Fairchild Semiconductor Corporation
Typical Characteristics
1.2
1.1
1.0
0.9
0.8
-100
Figure 9. Maximum Safe Operating Area
Figure 7. Breakdown Voltage Variation
-50
T
J
, Junction Temperature [
vs. Temperature
0
1 0
1 0
1 0
- 1
- 2
1 0
0
- 5
D = 0 . 5
0 . 0 2
50
0 . 0 1
0 . 0 5
0 . 2
0 . 1
Figure 11. Transient Thermal Response Curve
100
1 0
(Continued)
o
C]
t
- 4
s i n g l e p u l s e
1
※ Notes :
, S q u a r e W a v e P u l s e D u r a t i o n [ s e c ]
1. V
2. I
D
GS
= 250 μ A
= 0 V
150
1 0
- 3
200
1 0
- 2
2.5
2.0
1.5
1.0
0.5
0.0
-100
40
30
20
10
0
25
Figure 8. On-Resistance Variation
1 0
※ N o t e s :
Figure 10. Maximum Drain Current
1 . Z
2 . D u t y F a c t o r , D = t
3 . T
- 1
P
-50
DM
50
θ
J M
J C
- T
( t ) = 3 . 2 2 ℃ /W M a x .
C
vs. Case Temperature
= P
T
T
J
vs. Temperature
C
, Junction Temperature [
t
1
, Case Temperature [ ℃ ]
0
D M
75
1 0
t
2
* Z
0
θ
1
/t
J C
2
( t )
100
50
1 0
1
125
100
o
C]
※ Notes :
150
1. V
2. I
150
D
GS
= 25 A
= 10 V
Rev. A1. May 2001
175
200