FQP17P10 Fairchild Semiconductor, FQP17P10 Datasheet - Page 3

• Manufacturer Part Number: FQP17P10
• Description: MOSFET P-CH 100V 16.5A TO-220
• Manufacturer: Fairchild Semiconductor
• Series: QFET™r

Specifications of FQP17P10

• Fet Type: MOSFET P-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 190 mOhm @ 8.25A, 10V
• Drain To Source Voltage (vdss): 100V
• Current - Continuous Drain (id) @ 25° C: 16.5A
• Vgs(th) (max) @ Id: 4V @ 250µA
• Gate Charge (qg) @ Vgs: 39nC @ 10V
• Input Capacitance (ciss) @ Vds: 1100pF @ 25V
• Power - Max: 100W
• Mounting Type: Through Hole
• Package / Case: TO-220-3 (Straight Leads)
• Configuration: Single
• Transistor Polarity: P-Channel
• Resistance Drain-source Rds (on): 0.19 Ohms
• Forward Transconductance Gfs (max / Min): 9.9 S
• Drain-source Breakdown Voltage: - 100 V
• Gate-source Breakdown Voltage: +/- 30 V
• Continuous Drain Current: 16.5 A
• Power Dissipation: 100 W
• Maximum Operating Temperature: + 175 C
• Mounting Style: Through Hole
• Minimum Operating Temperature: - 55 C
• Continuous Drain Current Id: 16.5A
• Drain Source Voltage Vds: 100V
• On Resistance Rds(on): 190mohm
• Rds(on) Test Voltage Vgs: -10V
• Threshold Voltage Vgs Typ: -4V
• Rohs Compliant: Yes
• Fall Time: 100 ns
• Rise Time: 200 ns
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

©2002 Fairchild Semiconductor Corporation
Typical Characteristics
2200
2000
1800
1600
1400
1200
1000
800
600
400
200
10
0.7
0.6
0.5
0.4
0.3
0.2
0.1
0.0
10
10
-1
0
1
0
10
10
0
Figure 5. Capacitance Characteristics
-1
Figure 3. On-Resistance Variation vs.
-1
Top :
Bottom : -4.5 V
Figure 1. On-Region Characteristics
Drain Current and Gate Voltage
-15.0 V
-10.0 V
-8.0 V
-7.0 V
-6.5 V
-5.5 V
-5.0 V
V
GS
20
-V
C
V
C
C
iss
oss
rss
DS
DS
, Drain-Source Voltage [V]
, Drain-Source Voltage [V]
-I
D
10
10
, Drain Current [A]
0
0
V
GS
= - 20V
40
V
GS
= - 10V
※ Notes :
1. 250 μ s Pulse Test
2. T
C
C
C
C
iss
oss
rss
= 25 ℃
= C
= C
= C
10
※ Note : T
60
gs
gd
ds
10
1
+ C
+ C
1
gd
※ Notes :
gd
1. V
2. f = 1 MHz
(C
J
ds
= 25℃
GS
= shorted)
= 0 V
80
10
10
10
10
10
10
12
10
8
6
4
2
0
-1
-1
1
0
1
0
0.0
0
2
Figure 6. Gate Charge Characteristics
Figure 4. Body Diode Forward Voltage
25℃
Figure 2. Transfer Characteristics
175℃
175℃
5
Variation vs. Source Current
0.5
25℃
4
-V
-V
10
Q
SD
and Temperature
GS
G
1.0
-55℃
, Source-Drain Voltage [V]
, Total Gate Charge [nC]
, Gate-Source Voltage [V]
V
DS
V
15
= -80V
DS
= -50V
V
1.5
DS
6
= -20V
20
Dimensions in Millimeters
2.0
※ Notes :
25
※ Notes :
※ Note : I
1. V
2. 250μ s Pulse Test
1. V
2. 250μ s Pulse Test
8
DS
GS
= -40V
= 0V
2.5
D
= -16.5 A
30
Rev. B, August 2002
3.0
10
35