FQP17P10 Fairchild Semiconductor, FQP17P10 Datasheet - Page 3
![MOSFET P-CH 100V 16.5A TO-220](/photos/5/30/53099/261-to-220-3_sml.jpg)
FQP17P10
Manufacturer Part Number
FQP17P10
Description
MOSFET P-CH 100V 16.5A TO-220
Manufacturer
Fairchild Semiconductor
Series
QFET™r
Datasheet
1.FQP17P10.pdf
(8 pages)
Specifications of FQP17P10
Fet Type
MOSFET P-Channel, Metal Oxide
Fet Feature
Standard
Rds On (max) @ Id, Vgs
190 mOhm @ 8.25A, 10V
Drain To Source Voltage (vdss)
100V
Current - Continuous Drain (id) @ 25° C
16.5A
Vgs(th) (max) @ Id
4V @ 250µA
Gate Charge (qg) @ Vgs
39nC @ 10V
Input Capacitance (ciss) @ Vds
1100pF @ 25V
Power - Max
100W
Mounting Type
Through Hole
Package / Case
TO-220-3 (Straight Leads)
Configuration
Single
Transistor Polarity
P-Channel
Resistance Drain-source Rds (on)
0.19 Ohms
Forward Transconductance Gfs (max / Min)
9.9 S
Drain-source Breakdown Voltage
- 100 V
Gate-source Breakdown Voltage
+/- 30 V
Continuous Drain Current
16.5 A
Power Dissipation
100 W
Maximum Operating Temperature
+ 175 C
Mounting Style
Through Hole
Minimum Operating Temperature
- 55 C
Continuous Drain Current Id
16.5A
Drain Source Voltage Vds
100V
On Resistance Rds(on)
190mohm
Rds(on) Test Voltage Vgs
-10V
Threshold Voltage Vgs Typ
-4V
Rohs Compliant
Yes
Fall Time
100 ns
Rise Time
200 ns
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
FQP17P10
Manufacturer:
FAIRCHILD
Quantity:
500
Part Number:
FQP17P10
Manufacturer:
FAIRCHILD/仙童
Quantity:
20 000
©2002 Fairchild Semiconductor Corporation
Typical Characteristics
2200
2000
1800
1600
1400
1200
1000
800
600
400
200
10
0.7
0.6
0.5
0.4
0.3
0.2
0.1
0.0
10
10
-1
0
1
0
10
10
0
Figure 5. Capacitance Characteristics
-1
Figure 3. On-Resistance Variation vs.
-1
Top :
Bottom : -4.5 V
Figure 1. On-Region Characteristics
Drain Current and Gate Voltage
-15.0 V
-10.0 V
-8.0 V
-7.0 V
-6.5 V
-5.5 V
-5.0 V
V
GS
20
-V
C
V
C
C
iss
oss
rss
DS
DS
, Drain-Source Voltage [V]
, Drain-Source Voltage [V]
-I
D
10
10
, Drain Current [A]
0
0
V
GS
= - 20V
40
V
GS
= - 10V
※ Notes :
1. 250 μ s Pulse Test
2. T
C
C
C
C
iss
oss
rss
= 25 ℃
= C
= C
= C
10
※ Note : T
60
gs
gd
ds
10
1
+ C
+ C
1
gd
※ Notes :
gd
1. V
2. f = 1 MHz
(C
J
ds
= 25℃
GS
= shorted)
= 0 V
80
10
10
10
10
10
10
12
10
8
6
4
2
0
-1
-1
1
0
1
0
0.0
0
2
Figure 6. Gate Charge Characteristics
Figure 4. Body Diode Forward Voltage
25℃
Figure 2. Transfer Characteristics
175℃
175℃
5
Variation vs. Source Current
0.5
25℃
4
-V
-V
10
Q
SD
and Temperature
GS
G
1.0
-55℃
, Source-Drain Voltage [V]
, Total Gate Charge [nC]
, Gate-Source Voltage [V]
V
DS
V
15
= -80V
DS
= -50V
V
1.5
DS
6
= -20V
20
Dimensions in Millimeters
2.0
※ Notes :
25
※ Notes :
※ Note : I
1. V
2. 250μ s Pulse Test
1. V
2. 250μ s Pulse Test
8
DS
GS
= -40V
= 0V
2.5
D
= -16.5 A
30
Rev. B, August 2002
3.0
10
35