IRFW630BTM_FP001 Fairchild Semiconductor, IRFW630BTM_FP001 Datasheet - Page 5

• Manufacturer Part Number: IRFW630BTM_FP001
• Description: MOSFET N-CH 200V 9A D2PAK
• Manufacturer: Fairchild Semiconductor

Specifications of IRFW630BTM_FP001

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 400 mOhm @ 4.5A, 10V
• Drain To Source Voltage (vdss): 200V
• Current - Continuous Drain (id) @ 25° C: 9A
• Vgs(th) (max) @ Id: 4V @ 250µA
• Gate Charge (qg) @ Vgs: 29nC @ 10V
• Input Capacitance (ciss) @ Vds: 720pF @ 25V
• Power - Max: 3.13W
• Mounting Type: Surface Mount
• Package / Case: D²Pak, TO-263 (2 leads + tab)
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

©2002 Fairchild Semiconductor Corporation
10V
10V
10V
10V
12V
12V
t
t
p
p
3mA
3mA
200nF
200nF
R
R
R
R
G
G
G
G
50KΩ
50KΩ
V
V
V
V
GS
GS
GS
GS
Unclamped Inductive Switching Test Circuit & Waveforms
V
V
300nF
300nF
I
I
I
V
V
DS
DS
D
D
D
DS
DS
Resistive Switching Test Circuit & Waveforms
Gate Charge Test Circuit & Waveform
DUT
DUT
DUT
DUT
Same Type
Same Type
DUT
DUT
L
L L
as DUT
as DUT
R
R
L
L
V
V
DD
DD
V
V
DD
DD
V
V
DS
DS
BV
BV
V
V
V
V
10V
10V
DSS
DSS
V
V
I
I
V
V
DD
DD
GS
GS
AS
AS
DS
DS
GS
GS
E
E
E
10%
10%
AS
AS
AS
Q
Q
90%
90%
=
=
=
gs
gs
t
t
d(on)
d(on)
----
----
----
----
1
1
1
1
2
2
2
2
t
t
on
on
L I
L I
L I
t
t
r
r
I
I
AS
AS
AS
D
D
Q
Q
(t)
(t)
t
t
2
2
2
Q
Q
p
p
g
g
gd
gd
Charge
Charge
--------------------
--------------------
BV
BV
BV
BV
DSS
DSS
DSS
DSS
t
t
- V
- V
d(off)
d(off)
t
t
DD
DD
off
off
Time
Time
t
t
f
f
Rev. C, December 2002
V
V
DS
DS
(t)
(t)