FDS6576 Fairchild Semiconductor, FDS6576 Datasheet
FDS6576
Manufacturer Part Number
FDS6576
Description
MOSFET P-CH 20V 11A 8SOIC
Manufacturer
Fairchild Semiconductor
Series
PowerTrench®r
Datasheet
1.FDS6576.pdf
(5 pages)
Specifications of FDS6576
Fet Type
MOSFET P-Channel, Metal Oxide
Fet Feature
Logic Level Gate
Rds On (max) @ Id, Vgs
14 mOhm @ 11A, 4.5V
Drain To Source Voltage (vdss)
20V
Current - Continuous Drain (id) @ 25° C
11A
Vgs(th) (max) @ Id
1.5V @ 250µA
Gate Charge (qg) @ Vgs
60nC @ 4.5V
Input Capacitance (ciss) @ Vds
4044pF @ 10V
Power - Max
1W
Mounting Type
Surface Mount
Package / Case
8-SOIC (3.9mm Width)
Configuration
Single Quad Drain Triple Source
Transistor Polarity
P-Channel
Resistance Drain-source Rds (on)
0.014 Ohm @ 4.5 V
Forward Transconductance Gfs (max / Min)
50 S
Drain-source Breakdown Voltage
20 V
Gate-source Breakdown Voltage
+/- 12 V
Continuous Drain Current
11 A
Power Dissipation
2500 mW
Maximum Operating Temperature
+ 150 C
Mounting Style
SMD/SMT
Minimum Operating Temperature
- 55 C
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
FDS6576
Manufacturer:
FSC
Quantity:
2 500
Company:
Part Number:
FDS6576
Manufacturer:
FSC
Quantity:
1 933
Part Number:
FDS6576
Manufacturer:
FAIRCHILD/仙童
Quantity:
20 000
Company:
Part Number:
FDS6576-NL
Manufacturer:
FAIRCHILD
Quantity:
50 000
Part Number:
FDS6576-NL
Manufacturer:
FAIRCHILD/仙童
Quantity:
20 000
FDS6576
P-Channel 2.5V Specified PowerTrench MOSFET
General Description
This P-Channel 2.5V specified MOSFET is in a rugged
gate version of Fairchild Semiconductor's advanced
PowerTrench
management applications with a wide range of gate
drive voltage (2.5V - 12V).
Applications
•
•
•
Thermal Characteristics
Package Marking and Ordering Information
2006 Fairchild Semiconductor Corporation
Symbol
V
V
I
P
T
R
R
R
Absolute Maximum Ratings
Battery protection
Power management
D
Load switch
J
DSS
GSS
D
, T
JA
JA
JC
Device Marking
STG
FDS6576
®
®
process. It has been optimized for power
Drain-Source Voltage
Gate-Source Voltage
Drain Current
Power Dissipation for Single Operation
Operating and Storage Junction Temperature Range
Thermal Resistance, Junction-to-Ambient
Thermal Resistance, Junction-to-Ambient
Thermal Resistance, Junction-to-Case
D
D
SO-8
D
D
– Continuous
– Pulsed
FDS6576
S
Device
Parameter
S
S
G
T
A
=25
o
C unless otherwise noted
Reel Size
13’’
(Note 1a)
(Note 1a)
(Note 1b)
(Note 1c)
(Note 1a)
(Note 1c)
(Note 1)
Features
–11 A, –20 V. R
•
•
•
•
•
•
High power and current handling capability.
RoHS Compliant.
Extended V
High performance trench technology for extremely
Low gate charge (43nC typical).
Fast switching speed.
low R
DS(ON)
.
GSS
R
5
6
7
8
DS(ON)
DS(ON)
Tape width
range ( 12V) for battery applications.
–55 to +150
12mm
Ratings
= 0.014
= 0.020
–20
–11
–50
125
2.5
1.2
1.0
50
25
12
@ V
@ V
December 2006
GS
GS
4
3
2
1
= –4.5 V
= –2.5 V
FDS6576 Rev E3
2500 units
Quantity
Units
C/W
C/W
C/W
W
V
V
A
C
tm
Related parts for FDS6576
Image
Part Number
Description
Manufacturer
Datasheet
Request
R
Part Number:
Description:
Fairchild Semiconductor [IGBT MODULE]
Manufacturer:
Fairchild Semiconductor
Datasheet:
Part Number:
Description:
Discrete Semiconductor Modules
Manufacturer:
Fairchild Semiconductor
Part Number:
Description:
Discrete Semiconductor Modules
Manufacturer:
Fairchild Semiconductor
Part Number:
Description:
This N-Channel MOSFET is produced using Fairchild Semiconductors advanced Power Trench process
Manufacturer:
Fairchild Semiconductor
Datasheet:
Part Number:
Description:
This N-Channel MOSFET is produced using Fairchild Semiconductors advanced Power Trench process
Manufacturer:
Fairchild Semiconductor
Datasheet:
Part Number:
Description:
This N-Channel MOSFET is produced using Fairchild Semiconductors advanced PowerTrench process
Manufacturer:
Fairchild Semiconductor
Datasheet:
Part Number:
Description:
This N-Channel MOSFET is produced using Fairchild Semiconductors advanced PowerTrench process
Manufacturer:
Fairchild Semiconductor
Datasheet:
Part Number:
Description:
This N-Channel MOSFET is produced using Fairchild Semiconductors advanced Power Trench process
Manufacturer:
Fairchild Semiconductor
Datasheet:
Part Number:
Description:
This N-Channel logic Level MOSFETs are produced using Fairchild Semiconductors advanced Power Trench process that has been special tailored to minimize the on-state resistance and yet maintain superior switching performance
Manufacturer:
Fairchild Semiconductor
Datasheet:
Part Number:
Description:
This N-Channel MOSFET is produced using Fairchild Semiconductors advanced Power Trench process
Manufacturer:
Fairchild Semiconductor
Datasheet:
Part Number:
Description:
This N-Channel SyncFET is produced using Fairchild Semiconductors advanced PowerTrench process
Manufacturer:
Fairchild Semiconductor
Datasheet:
Part Number:
Description:
This N-Channel SyncFET is produced using Fairchild Semiconductors advanced PowerTrench process
Manufacturer:
Fairchild Semiconductor
Datasheet:
Part Number:
Description:
This N-Channel SyncFET is produced using Fairchild Semiconductors advanced PowerTrench process
Manufacturer:
Fairchild Semiconductor
Datasheet:
Part Number:
Description:
This N-Channel logic Level MOSFETs are produced using Fairchild Semiconductors advanced Power Trench process that has been special tailored to minimize the on-state resistance and yet maintain superior switching performance
Manufacturer:
Fairchild Semiconductor
Datasheet:
Part Number:
Description:
This N-Channel MOSFET is produced using Fairchild Semiconductors advanced Power Trench process that has been especially tailored to minimize the on-state resistance and yet maintain superior switching performance
Manufacturer:
Fairchild Semiconductor
Datasheet:
FDS6576 Summary of contents
Page 1
... Reel Size 13’’ December 2006 = 0.014 @ V = –4.5 V DS(ON 0.020 @ V = –2.5 V DS(ON) GS range ( 12V) for battery applications. GSS Ratings Units – –11 A –50 2.5 W 1.2 1.0 –55 to +150 C 50 C/W 125 C/W 25 C/W Tape width Quantity 12mm 2500 units FDS6576 Rev E3 tm ...
Page 2
... Min Typ Max Units –20 V –13 mV/ C –1 A 100 nA –100 nA –0.6 –0.83 –1.5 V 3.5 mV 11.5 20 11.1 23 – 4044 pF 955 pF 504 124 198 ns 79 126 –2.1 A –0.66 –1 125°C/W when mounted on a minimum pad. FDS6576 Rev E3 ...
Page 3
... Figure 6. Body Diode Forward Voltage Variation with Source Current and Temperature. = 3.0V GS 3.5V 4.5V 6.0V 10V DRAIN CURRENT ( 125 GATE TO SOURCE VOLTAGE (V) GS Gate-to-Source Voltage 125 -55 C 0.2 0.4 0.6 0 BODY DIODE FORWARD VOLTAGE (V) SD FDS6576 Rev 1.2 ...
Page 4
... C RSS Figure 8. Capacitance Characteristics. 50 100 40 1ms 10ms 100 0.001 0.01 Figure 10. Single Pulse Maximum 0.01 0 1MHz ISS C OSS DRAIN TO SOURCE VOLTAGE (V) DS SINGLE PULSE R = 125 / 0 100 t , TIME (sec) 1 Power Dissipation. R ( 125 /W JA P(pk ( Duty Cycle 100 FDS6576 Rev 1000 ...
Page 5
... Not In Production This datasheet contains specifications on a product that has been discontinued by Fairchild semiconductor. The datasheet is printed for reference information only. ® UniFET™ VCX™ Wire™ ® ® Definition Rev. I22 FDS6576 Rev E3 ...