FQPF11N40CT Fairchild Semiconductor, FQPF11N40CT Datasheet

FQPF11N40CT

Manufacturer Part Number

FQPF11N40CT

Description

MOSFET N-CH 400V 10.5A TO-220F

Manufacturer

Fairchild Semiconductor

Series

QFET™r

Datasheet

1.FQPF11N40CT.pdf (10 pages)

Specifications of FQPF11N40CT

Fet Type

MOSFET N-Channel, Metal Oxide

Fet Feature

Standard

Rds On (max) @ Id, Vgs

530 mOhm @ 5.25A, 10V

Drain To Source Voltage (vdss)

400V

Current - Continuous Drain (id) @ 25° C

10.5A

Vgs(th) (max) @ Id

4V @ 250µA

Gate Charge (qg) @ Vgs

35nC @ 10V

Input Capacitance (ciss) @ Vds

1090pF @ 25V

Power - Max

44W

Mounting Type

Through Hole

Package / Case

TO-220-3 Full Pack (Straight Leads)

Configuration

Single

Transistor Polarity

N-Channel

Resistance Drain-source Rds (on)

0.43 Ohms

Forward Transconductance Gfs (max / Min)

7.1 S

Drain-source Breakdown Voltage

400 V

Gate-source Breakdown Voltage

+/- 30 V

Continuous Drain Current

10.5 A

Power Dissipation

44 W

Maximum Operating Temperature

+ 150 C

Mounting Style

Through Hole

Minimum Operating Temperature

- 55 C

Lead Free Status / RoHS Status

Lead free / RoHS Compliant

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FQP11N40C/FQPF11N40C Rev. C1

FQP11N40C/FQPF11N40C

400V N-Channel MOSFET

Features

• 10.5 A, 400V, R

• Low gate charge ( typical 28 nC)

• Low Crss ( typical 85pF)

• Fast switching

• 100% avalanche tested

• Improved dv/dt capability

Absolute Maximum Ratings

* Drain current limited by maximum junction temperature

Thermal Characteristics

dv/dt

Symbol

DSS

GSS

TJC

TCS

TJA

, T

STG

Drain-Source Voltage

Drain Current

Gate-Source Voltage

Single Pulsed Avalanche Energy

Avalanche Current

Repetitive Avalanche Energy

Peak Diode Recovery dv/dt

Power Dissipation (T

Operating and Storage Temperature Range

Maximum lead temperature for soldering purposes,

1/8 from case for 5 seconds

Thermal Resistance, Junction-to-Case

Thermal Resistance, Case-to-Sink Typ.

Thermal Resistance, Junction-to-Ambient

DS(on)

0.5 : @V

- Continuous (T

- Pulsed

- Derate above 25°C

TO-220

FQP Series

Parameter

= 25°C)

= 10 V

= 25°C)

= 100°C)

(Note 1)

(Note 2)

(Note 1)

(Note 3)

Description

These N-Channel enhancement mode power field effect transis-

tors are produced using Fairchild’s proprietary, planar stripe,

DMOS technology.

This advanced technology has been especially tailored to

minimize on-state resistance, provide superior switching perfor-

mance, and withstand high energy pulse in the avalanche and

commutation mode. These devices are well suited for high effi-

ciency switched mode power supplies, active power factor cor-

rection, electronic lamp ballasts based on half bridge topology.

FQP11N40C

TO-220F

FQPF Series

10.5

1.07

0.93

62.5

135

6.6

0.5

-55 to +150

r 30

13.5

400

360

300

4.5

FQPF11N40C

{

10.5 *

6.6 *

0.35

2.86

62.5

42 *

{

www.fairchildsemi.com

August 2010

Units

W/°C

°C/W

V/ns

°C

Related parts for FQPF11N40CT

FQPF11N40CT Summary of contents

Page 1

... Thermal Resistance, Junction-to-Case TJC R Thermal Resistance, Case-to-Sink Typ. TCS R Thermal Resistance, Junction-to-Ambient TJA ©2010 Fairchild Semiconductor Corporation FQP11N40C/FQPF11N40C Rev. C1 Description = 10 V These N-Channel enhancement mode power field effect transis- GS tors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to ...

Page 2

Package Marking and Ordering Information Device Marking Device FQP11N40C FQP11N40C FQPF11N40C FQPF11N40C Electrical Characteristics Symbol Parameter Off Characteristics BV Drain-Source Breakdown Voltage DSS 'BV / Breakdown Voltage Temperature DSS 'T Coefficient J I Zero Gate Voltage Drain Current DSS I ...

Page 3

Typical Performance Characteristics Figure 1. On-Region Characteristics V GS Top : 15.0 V 10.0 V 8 6.0 V 5.5 V 5.0 V Bottom : 4 Drain-Source ...

Page 4

Typical Performance Characteristics Figure 7. Breakdown Voltage Variation vs. Temperature 1.2 1.1 1.0 0.9 0.8 -100 - Junction Temperature [ J Figure 9-1. Maximum Safe Operating Area of FQP4N50C Operation in This Area ...

Page 5

Typical Performance Characteristics Figure 11-1. ransient Thermal Response Curve of FQP3N50C ...

Page 6

3mA 3mA 10V 10V Unclamped Inductive Switching Test Circuit & Waveforms 10V 10V FQP11N40C/FQPF11N40C ...

Page 7

Driver ) ( Driver ) DUT ) ( DUT ) DUT ) ( DUT ) FQP11N40C/FQPF11N40C Rev. C1 Peak Diode Recovery dv/dt Test ...

Page 8

Mechanical Dimensions FQP11N40C/FQPF11N40C Rev. C1 TO-220 8 Dimensions in Millimeters www.fairchildsemi.com ...

Page 9

Mechanical Dimensions FQP11N40C/FQPF11N40C Rev. C1 (Continued) TO-220F 9 Dimensions in Millimeters www.fairchildsemi.com ...

Page 10

... TRADEMARKS The following includes registered and unregistered trademarks and service marks, owned by Fairchild Semiconductor and/or its global subsidiaries, and is not intended exhaustive list of all such trademarks. AccuPower™ Auto-SPM™ Build it Now™ CorePLUS™ CorePOWER™ CROSSVOLT ™ CTL™ ...

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