FDS6682 Fairchild Semiconductor, FDS6682 Datasheet

MOSFET N-CH 30V 14A 8SOIC

FDS6682

Manufacturer Part Number
FDS6682
Description
MOSFET N-CH 30V 14A 8SOIC
Manufacturer
Fairchild Semiconductor
Series
PowerTrench®r
Datasheet

Specifications of FDS6682

Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Logic Level Gate
Rds On (max) @ Id, Vgs
7.5 mOhm @ 14A, 10V
Drain To Source Voltage (vdss)
30V
Current - Continuous Drain (id) @ 25° C
14A
Vgs(th) (max) @ Id
3V @ 250µA
Gate Charge (qg) @ Vgs
31nC @ 5V
Input Capacitance (ciss) @ Vds
2310pF @ 15V
Power - Max
1W
Mounting Type
Surface Mount
Package / Case
8-SOIC (3.9mm Width)
Transistor Polarity
N Channel
Continuous Drain Current Id
14A
Drain Source Voltage Vds
30V
On Resistance Rds(on)
7.5mohm
Rds(on) Test Voltage Vgs
10V
Threshold Voltage Vgs Typ
1.7V
Rohs Compliant
Yes
Configuration
Single Quad Drain Triple Source
Resistance Drain-source Rds (on)
0.0057 Ohms
Forward Transconductance Gfs (max / Min)
70 S
Drain-source Breakdown Voltage
30 V
Gate-source Breakdown Voltage
+/- 20 V
Continuous Drain Current
14 A
Power Dissipation
2.5 W
Maximum Operating Temperature
+ 150 C
Mounting Style
SMD/SMT
Minimum Operating Temperature
- 55 C
Lead Free Status / RoHS Status
Lead free / RoHS Compliant

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
FDS6682
Manufacturer:
FSC
Quantity:
20 000
Company:
Part Number:
FDS6682
Quantity:
10 000
Part Number:
FDS6682-NL
Manufacturer:
FAIRCHILD
Quantity:
50 000
Part Number:
FDS6682-NL
Manufacturer:
FAIRCHILD/仙童
Quantity:
20 000
Final PCN Q3073705 is an addendum for Final PCN Q1070805.
This is to inform you that a design and/or process change will be made to the following
product(s). This notification is for your information and concurrence.
If you require data or samples to qualify this change, please contact Fairchild Semiconductor
within 30 days of receipt of this notification.
Updated process quality documentation, such as FMEAs and Control Plans, are available for
viewing upon request.
If you have any questions concerning this change, please contact:
PCN Originator:
Name: Kalabkova, Ivana
E-mail: Ivana.Kalabkova@notes.fairchildsemi.com
Phone: 408-822-2187
Implementation of change:
Expected 1st Device Shipment Date: 2007/12/10
Earliest Year/Work Week of Changed Product: 0750
Change Type Description: Bond Wire Material Composition
Description of Change (From): Wirebond material using 2mil Gold (Au) wire for SO8 devices
manufactured in subcontractor site, GEM Electronics Ltd Shanghai China.
Description of Change (To): Wirebond material using 2mil Copper (Cu) wire for SO8 devices
manufactured in subcontractor site, GEM Electronics Ltd Shanghai China.
Reason for Change : Qualification of GEM as alternate site for Cu wire bonded parts for SO-8.
Products will be shipped for an interim period of time with Au wire until the inventory is
depleted and then converted to Cu wire. GEM Electronics Ltd., Shanghai China is TS-16949
certified.
Qual/REL Plan Numbers : Q20070231
Qualification :
This change will have no impact on any of the electrical parameters of the products
involved. The product test conditions, test limits and performance will remain
unchanged. Products will be built with the same level of quality and reliability as with
the existing products. The devices for qualification and qualification requirements are
defined in the table below.
Results/Discussion
Test: (Autoclave)
DESIGN/PROCESS CHANGE NOTIFICATION -- FINAL
Technical Contact:
Name: Rivero, Douglas
E-mail: Doug.Rivero@fairchildsemi.com
Phone: 1-408-822-2143
Date Issued On : 2007/10/12
Date Created : 2007/09/11
PCN# : Q3073705
Pg. 1

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FDS6682 Summary of contents

Page 1

... This is to inform you that a design and/or process change will be made to the following product(s). This notification is for your information and concurrence. If you require data or samples to qualify this change, please contact Fairchild Semiconductor within 30 days of receipt of this notification. Updated process quality documentation, such as FMEAs and Control Plans, are available for viewing upon request ...

Page 2

Lot Device Q20070231AAACLV FDS6912A Q20070231BAACLV FDS3570 Q20070231CAACLV FDS3672 Q20070231DAACLV FDS8870 Test: (High Temperature Gate Bias) Lot Device Q20070231AAHTGB FDS6912A Q20070231BAHTGB FDS3570 Q20070231CAHTGB FDS3672 Q20070231DAHTGB FDS8870 Test: (High Temperature Reverse Bias) Lot Device Q20070231AAHTRB FDS6912A Q20070231BAHTRB FDS3570 Q20070231CAHTRB FDS3672 Q20070231DAHTRB FDS8870 ...

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