FQB5N50CTM Fairchild Semiconductor, FQB5N50CTM Datasheet
FQB5N50CTM
Manufacturer Part Number
FQB5N50CTM
Description
MOSFET N-CH 500V 5A A.D2PAK
Manufacturer
Fairchild Semiconductor
Series
QFET™r
Specifications of FQB5N50CTM
Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Standard
Rds On (max) @ Id, Vgs
1.4 Ohm @ 2.5A, 10V
Drain To Source Voltage (vdss)
500V
Current - Continuous Drain (id) @ 25° C
5A
Vgs(th) (max) @ Id
4V @ 250µA
Gate Charge (qg) @ Vgs
24nC @ 10V
Input Capacitance (ciss) @ Vds
625pF @ 25V
Power - Max
73W
Mounting Type
Surface Mount
Package / Case
D²Pak, TO-263 (2 leads + tab)
Configuration
Single
Transistor Polarity
N-Channel
Resistance Drain-source Rds (on)
1.4 Ohms
Forward Transconductance Gfs (max / Min)
5.2 S
Drain-source Breakdown Voltage
500 V
Gate-source Breakdown Voltage
+/- 30 V
Continuous Drain Current
5 A
Power Dissipation
73 W
Maximum Operating Temperature
+ 150 C
Mounting Style
SMD/SMT
Minimum Operating Temperature
- 55 C
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Part Number:
FQB5N50CTM
Manufacturer:
FAIRCHILD/仙童
Quantity:
20 000
This is to inform you that a design and/or process change will be made to the following
product(s). This notification is for your information and concurrence.
If you require data or samples to qualify this change, please contact Fairchild Semiconductor
within 30 days of receipt of this notification.
Updated process quality documentation, such as FMEAs and Control Plans, are available for
viewing upon request.
If you have any questions concerning this change, please contact:
PCN Originator:
Name: LEE, JEONGSOO
E-mail: JEONGSOO.LEE@fairchildsemi.com
Phone: 82-32-680-1311
Implementation of change:
Expected 1st Device Shipment Date: 2008/08/10
Earliest Year/Work Week of Changed Product: WW33
Change Type Description: Passivation Material, Fab Process Change
Description of Change (From): There is no passivation layer.
Description of Change (To): Adding Passivation layer on front metal.
Reason for Change : To improve product quality.
Qual/REL Plan Numbers : Q20070212
Qualification :
All items were passed.
Results/Discussion
Test: (Autoclave)
Lot
Q20070212AAACLV
Q20070212ABACLV
Q20070212ACACLV
Test: (High Temperature Gate Bias)
Lot
Q20070212AAHTGB
Q20070212AAHTGB
Q20070212ABHTGB
Q20070212ABHTGB
Q20070212ACHTGB
DESIGN/PROCESS CHANGE NOTIFICATION -- FINAL
Technical Contact:
Name: LEE, JEONGSOO
E-mail: JEONGSOO.LEE@fairchildsemi.com
Phone: 82-32-680-1311
Device
FQPF6N90C
FQPF6N90C
FQPF6N90C
FQPF6N90C
FQPF6N90C
Device
FQPF6N90C
FQPF6N90C
FQPF6N90C
500-HOURS
0/77
0/77
0/77
96-HOURS
0/77
0/77
0/77
1000-HOURS
0/77
0/77
Date Issued On : 2008/05/14
Date Created : 2008/05/09
Failure Code
Failure Code
PCN# : Q2081907
Pg. 1
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FQB5N50CTM Summary of contents
Page 1
... This is to inform you that a design and/or process change will be made to the following product(s). This notification is for your information and concurrence. If you require data or samples to qualify this change, please contact Fairchild Semiconductor within 30 days of receipt of this notification. Updated process quality documentation, such as FMEAs and Control Plans, are available for viewing upon request ...
Page 2
... FQB12N60CTM FQB5N50CTM FQD2N60CTF FQD2N60CTM_WS FQD3N50CTM_F101 FQD3N60CTM_WS FQD5N50CTM FQD5N50CTM_WS FQD6N50CTM_F105 FQI5N50CTU FQP12N60C_F080 FQP13N50C_F105 FQP3N50C FQP5N50C FQP6N50C FQPF12N60C FQPF13N50CSDTU FQPF13N50C_TC003 FQPF3N50C FQPF9N50C FQU2N60CTU FQU5N50CTU ...