SI7465DP-T1-GE3 Vishay, SI7465DP-T1-GE3 Datasheet - Page 4

• Manufacturer Part Number: SI7465DP-T1-GE3
• Description: MOSFET P-CH 60V 3.2A PPAK 8SOIC
• Manufacturer: Vishay

Specifications of SI7465DP-T1-GE3

• Fet Type: MOSFET P-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 64 mOhm @ 5A, 10V
• Drain To Source Voltage (vdss): 60V
• Current - Continuous Drain (id) @ 25° C: 3.2A
• Vgs(th) (max) @ Id: 3V @ 250µA
• Gate Charge (qg) @ Vgs: 40nC @ 10V
• Power - Max: 1.5W
• Mounting Type: Surface Mount
• Package / Case: PowerPAK® SO-8
• Transistor Polarity: P Channel
• Continuous Drain Current Id: -5A
• Drain Source Voltage Vds: -60V
• On Resistance Rds(on): 80mohm
• Rds(on) Test Voltage Vgs: -4.5V
• Threshold Voltage Vgs Typ: -3V
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: SI7465DP-T1-GE3TR

Si7465DP
Vishay Siliconix
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
www.vishay.com
4
- 0.2
- 0.4
1.0
0.8
0.6
0.4
0.2
0.0
0.01
- 50
0.1
2
1
10
-4
- 25
Duty Cycle = 0.5
0.2
0.1
0.05
0.02
Single Pulse
0
I
Threshold Voltage
T
D
J
= 250 µA
25
- Temperature (°C)
10
-3
50
Normalized Thermal Transient Impedance, Junction-to-Ambient
75
0.001
0.01
100
0.1
10
1
100
0.1
10
Limited by R
-2
* V
125
GS
Single Pulse
T
> minimum V
A
= 25 °C
V
150
DS
DS(on)
Square Wave Pulse Duration (s)
- Drain-to-Source Voltage (V)
Safe Operating Area
1
10
*
-1
GS
at which R
DS(on)
10
100
80
60
40
20
0
1
0.001
is specified
Single Pulse Power, Junction-to-Ambient
100
10 µs
100 µs
1 ms
10 ms
100 ms
1 s
10 s
100 s, DC
0.01
10
Notes:
1. Duty Cycle, D =
2. Per Unit Base = R
3. T
4. Surface Mounted
P
DM
JM
Time (s)
-
T
t
A
1
0.1
S09-0271-Rev. C, 16-Feb-09
= P
t
2
Document Number: 73113
DM
Z
thJA
thJA
100
t
t
1
2
(t)
= 52 °C/W
1
600
10