FQP9N50C Fairchild Semiconductor, FQP9N50C Datasheet - Page 5

• Manufacturer Part Number: FQP9N50C
• Description: MOSFET N-CH 500V 9A TO-220
• Manufacturer: Fairchild Semiconductor
• Series: QFET™r

Specifications of FQP9N50C

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 800 mOhm @ 4.5A, 10V
• Drain To Source Voltage (vdss): 500V
• Current - Continuous Drain (id) @ 25° C: 9A
• Vgs(th) (max) @ Id: 4V @ 250µA
• Gate Charge (qg) @ Vgs: 35nC @ 10V
• Input Capacitance (ciss) @ Vds: 1030pF @ 25V
• Power - Max: 135W
• Mounting Type: Through Hole
• Package / Case: TO-220-3 (Straight Leads)
• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 0.8 Ohms
• Forward Transconductance Gfs (max / Min): 6.5 S
• Drain-source Breakdown Voltage: 500 V
• Gate-source Breakdown Voltage: +/- 30 V
• Continuous Drain Current: 9 A
• Power Dissipation: 135 W
• Maximum Operating Temperature: + 150 C
• Mounting Style: Through Hole
• Minimum Operating Temperature: - 55 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

©2003 Fairchild Semiconductor Corporation
Typical Characteristics
Figure 11-2. Transient Thermal Response Curve for FQPF9N50C
1 0
1 0
1 0
1 0
1 0
1 0
Figure 11-1. Transient Thermal Response Curve for FQP9N50C
- 1
- 2
- 1
- 2
0
1 0
0
1 0
- 5
- 5
D = 0 . 5
D = 0 . 5
0 . 0 1
0 . 0 5
0 . 0 2
0 . 1
0 . 0 5
0 . 2
0 . 0 2
0 . 0 1
0 . 2
0 . 1
(Continued)
s in g le p u ls e
1 0
1 0
s in g le p u ls e
- 4
- 4
t
t
1
1
, S q u a r e W a v e P u ls e D u r a t io n [ s e c ]
, S q u a r e W a v e P u ls e D u r a t io n [ s e c ]
1 0
1 0
- 3
- 3
1 0
1 0
- 2
- 2
※ N o t e s :
1 0
1 0
※ N o t e s :
1 . Z
2 . D u ty F a c t o r , D = t
3 . T
- 1
- 1
1 . Z
2 . D u ty F a c t o r , D = t
3 . T
P
θ J C
J M
P
DM
θ J C
J M
DM
( t ) = 0 . 9 3 ℃ / W M a x .
- T
( t ) = 2 . 8 6 ℃ / W M a x .
- T
C
= P
C
= P
t
D M
1 0
1
1 0
t
t
D M
1
2
* Z
t
0
0
2
* Z
1
θ J C
/ t
1
2
θ J C
/ t
( t )
2
( t )
1 0
1 0
1
1
Rev. A, June 2003