IRF644B_FP001 Fairchild Semiconductor, IRF644B_FP001 Datasheet - Page 3

• Manufacturer Part Number: IRF644B_FP001
• Description: MOSFET N-CH 250V 14A TO-220
• Manufacturer: Fairchild Semiconductor

Specifications of IRF644B_FP001

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 280 mOhm @ 7A, 10V
• Drain To Source Voltage (vdss): 250V
• Current - Continuous Drain (id) @ 25° C: 14A
• Vgs(th) (max) @ Id: 4V @ 250µA
• Gate Charge (qg) @ Vgs: 60nC @ 10V
• Input Capacitance (ciss) @ Vds: 1600pF @ 25V
• Power - Max: 139W
• Mounting Type: Through Hole
• Package / Case: TO-220-3 (Straight Leads)
• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 0.28 Ohms
• Drain-source Breakdown Voltage: 250 V
• Gate-source Breakdown Voltage: +/- 30 V
• Continuous Drain Current: 14 A
• Power Dissipation: 139 W
• Maximum Operating Temperature: + 150 C
• Mounting Style: Through Hole
• Minimum Operating Temperature: - 55 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

©2001 Fairchild Semiconductor Corporation
Typical Characteristics
3500
3000
2500
2000
1500
1000
500
10
1.5
1.2
0.9
0.6
0.3
0.0
10
10
0
-1
10
1
0
10
0
Figure 5. Capacitance Characteristics
-1
-1
Figure 3. On-Resistance Variation vs
Top :
Bottom :
Figure 1. On-Region Characteristics
Drain Current and Gate Voltage
10.0 V
15.0 V
8.0 V
7.0 V
6.5 V
6.0 V
5.5 V
5.0 V
V
GS
10
V
V
DS
DS
, Drain-Source Voltage [V]
, Drain-Source Voltage [V]
I
10
10
D
, Drain Current [A]
0
0
20
C
C
C
oss
rss
iss
V
V
GS
GS
= 10V
= 20V
30
C
C
C
※ Notes :
iss
oss
rss
1. 250μ s Pulse Test
2. T
10
10
= C
= C
= C
※ Note : T
1
1
C
gs
gd
ds
= 25℃
+ C
+ C
40
※ Notes :
gd
gd
1. V
2. f = 1 MHz
(C
J
ds
GS
= 25 ℃
= shorted)
= 0 V
50
10
10
10
10
10
10
12
10
8
6
4
2
0
-1
-1
1
0
1
0
0.2
0
2
Figure 4. Body Diode Forward Voltage
Figure 6. Gate Charge Characteristics
Figure 2. Transfer Characteristics
150
25
5
0.4
o
Variation with Source Current
o
C
C
150℃
10
0.6
4
V
V
15
and Temperature
Q
25℃
GS
SD
G
, Gate-Source Voltage [V]
, Source-Drain voltage [V]
, Total Gate Charge [nC]
0.8
-55
V
20
DS
o
C
= 200V
V
DS
= 125V
1.0
25
V
6
DS
= 50V
30
1.2
35
※ Notes :
※ Notes :
1. V
2. 250μ s Pulse Test
1. V
2. 250 μ s Pulse Test
1.4
※ Note : I
8
DS
GS
= 40V
= 0V
40
D
= 14 A
1.6
45
Rev. A, November 2001
1.8
10
50