ZXM64N02XTC Diodes Zetex, ZXM64N02XTC Datasheet - Page 2

• Manufacturer Part Number: ZXM64N02XTC
• Description: MOSFET N-CHAN 20V MSOP8
• Manufacturer: Diodes Zetex

Specifications of ZXM64N02XTC

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 40 mOhm @ 3.8A, 4.5V
• Drain To Source Voltage (vdss): 20V
• Current - Continuous Drain (id) @ 25° C: 5.4A
• Vgs(th) (max) @ Id: 700mV @ 250µA
• Gate Charge (qg) @ Vgs: 16nC @ 4.5V
• Input Capacitance (ciss) @ Vds: 1100pF @ 15V
• Power - Max: 1.1W
• Mounting Type: Surface Mount
• Package / Case: 8-MSOP, Micro8™, 8-uMAX, 8-uSOP,
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

ABSOLUTE MAXIMUM RATINGS.
THERMAL RESISTANCE
NOTES
(a) For a device surface mounted on 25mm x 25mm FR4 PCB with high coverage of single sided 1oz copper,
in still air conditions
(b) For a device surface mounted on FR4 PCB measured at t 10 secs.
(c) Repetitive rating - pulse width limited by maximum junction temperature. Refer to Transient Thermal
Impedance graph.
Issue 2 - February 2008
ZXM64N02X
PARAMETER
Drain-Source Voltage
Gate- Source Voltage
Continuous Drain Current (V
Pulsed Drain Current (c)
Continuous Source Current (Body Diode)(b)
Power Dissipation at T
Linear Derating Factor
Power Dissipation at T
Linear Derating Factor
Operating and Storage Temperature Range
PARAMETER
Junction to Ambient (a)
Junction to Ambient (b)
Pulsed Source Current (Body Diode)(c)
A
A
=25°C (a)
=25°C (b)
(V
GS
GS
=4.5V; T
=4.5V; T
A
A
=25°C)(b)
=70°C)(b)
2
SYMBOL
V
I
I
I
P
P
V
I
T
D
DM
S
SM
SYMBOL
R
R
D
D
j
DSS
GS
:T
JA
JA
stg
-55 to +150
VALUE
LIMIT
14.4
113
5.4
4.3
2.4
1.1
8.8
1.8
20
30
30
70
12
mW/°C
mW/°C
UNIT
UNIT
°C/W
°C/W
W
W
°C
V
V
A
A
A
A