FQPF7N65C Fairchild Semiconductor, FQPF7N65C Datasheet - Page 5

• Manufacturer Part Number: FQPF7N65C
• Description: MOSFET N-CH 650V 7A TO-220F
• Manufacturer: Fairchild Semiconductor
• Series: QFET™r

Specifications of FQPF7N65C

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 1.4 Ohm @ 3.5A, 10V
• Drain To Source Voltage (vdss): 650V
• Current - Continuous Drain (id) @ 25° C: 7A
• Vgs(th) (max) @ Id: 4V @ 250µA
• Gate Charge (qg) @ Vgs: 36nC @ 10V
• Input Capacitance (ciss) @ Vds: 1245pF @ 25V
• Power - Max: 52W
• Mounting Type: Through Hole
• Package / Case: TO-220-3 Full Pack (Straight Leads)
• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 1.4 Ohms
• Forward Transconductance Gfs (max / Min): 8 S
• Drain-source Breakdown Voltage: 650 V
• Gate-source Breakdown Voltage: +/- 30 V
• Continuous Drain Current: 7 A
• Power Dissipation: 52 W
• Maximum Operating Temperature: + 150 C
• Mounting Style: Through Hole
• Minimum Operating Temperature: - 55 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

©2004 Fairchild Semiconductor Corporation
Typical Characteristics
1 0
1 0
1 0
1 0
1 0
1 0
Figure 11-2. Transient Thermal Response Curve for FQPF7N65C
-1
-2
-1
-2
0
1 0
0
1 0
Figure 11. Transient Thermal Response Curve for FQP7N65C
-5
-5
D = 0 .5
0 .0 2
0 .0 1
D = 0 . 5
0 .0 2
0 .0 1
0 .0 5
0 .0 5
0 .2
0 . 1
0 .2
0 .1
s in g le p u ls e
(Continued)
1 0
1 0
s in g le p u ls e
-4
-4
t
t
1
1
, S q u a r e W a v e P u ls e D u ra tio n [s e c ]
, S q u a r e W a v e P u ls e D u ra tio n [s e c ]
1 0
1 0
-3
-3
1 0
1 0
-2
-2
※
1 0
1 0
1 . Z
2 . D u ty F a c to r, D = t
3 . T
N o te s :
-1
-1
※
P
1 . Z
2 . D u ty F a c to r, D = t
3 . T
θ J C
J M
DM
N o te s :
P
- T
(t) = 0 .7 8
θ J C
J M
DM
C
- T
(t) = 2 .4
= P
C
= P
D M
t
1
1 0
1 0
t
℃
* Z
2
t
D M
1
0
0
℃
t
/W M a x .
1
2
θ J C
/t
* Z
2
/W M a x .
1
(t)
θ J C
/t
2
(t)
1 0
1 0
1
1
Rev. A, May 2004